Fan-out interconnect structure and methods forming the same

Patent metadata

Field	Value
Publication number	US-9659805-B2
Application number	US-201514690015-A
Country	US
Kind code	B2
Filing date	Apr 17, 2015
Priority date	Apr 17, 2015
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A method includes forming an adhesive layer over a carrier, forming a sacrificial layer over the adhesive layer, forming through-vias over the sacrificial layer, and placing a device die over the sacrificial layer. The Method further includes molding and planarizing the device die and the through-vias, de-bonding the carrier by removing the adhesive layer, and removing the sacrificial layer.

First claim

What is claimed is:

1. A method comprising:
forming an adhesive layer over a carrier;
forming a blanket layer as a sacrificial layer over the adhesive layer, wherein the carrier and the sacrificial layer are in contact with opposite surfaces of the adhesive layer;
forming through-vias overlapping the sacrificial layer;
placing a device die over the sacrificial layer;
molding the device die in an encapsulating material;
planarizing top surfaces of the device, the through-vias, and the encapsulating material to form a planar top surface;
de-bonding the carrier by removing the adhesive layer; and
removing the sacrificial layer from a combined structure comprising the device die, the through-vias, and the encapsulating material.

2. The method of claim 1 , wherein the forming the sacrificial layer comprises forming a hexamethyldisilance (HMDS) layer.

3. The method of claim 2 , wherein the removing the sacrificial layer is performed by a same step as the de-bonding the carrier.

4. The method of claim 1 , wherein the forming the sacrificial layer comprises forming a metal layer or an inorganic dielectric layer.

5. The method of claim 1 , wherein the removing the sacrificial layer comprises etching an entirety of the sacrificial layer.

6. The method of claim 4 , wherein the forming the sacrificial layer comprises forming a titanium layer.

7. The method of claim 4 , wherein the forming the sacrificial layer comprises forming an oxide layer.

8. The method of claim 1 further comprising:
before the forming the through-vias, forming and patterning a dielectric layer over the sacrificial layer, with portions of the sacrificial layer exposed through openings in the dielectric layer; and
forming a metal seed layer over the sacrificial layer and plating the through-vias starting from the metal seed layer, wherein the metal seed layer extends into the openings in the dielectric layer.

9. The method of claim 1 , wherein the forming the through-vias comprises:
forming a metal seed layer over the sacrificial layer; and
plating the through-vias starting from the metal seed layer, wherein an entirety of the metal seed layer is formed as a planar layer.

10. The method of claim 1 , wherein the sacrificial layer is formed over the adhesive layer after the adhesive layer is formed over the carrier.

11. A method comprising:
forming an adhesive layer over a carrier;
forming a sacrificial layer over the adhesive layer;
forming a dielectric layer over the sacrificial layer;
patterning the dielectric layer to allow portions of the sacrificial layer exposed through openings in the dielectric layer;
forming a metal seed layer over the sacrificial layer, wherein the metal seed layer extends into the openings in the dielectric layer;
forming through-vias over the sacrificial layer, wherein the through-vias are plated from the metal seed layer;
placing a device die over the sacrificial layer;
molding and planarizing the device die and the through-vias;
de-bonding the carrier by removing the adhesive layer; and
removing the sacrificial layer.

12. The method of claim 11 , wherein the forming the sacrificial layer comprises forming an organic layer.

13. The method of claim 11 , wherein the removing the sacrificial layer is performed by a same step as the de-bonding the carrier.

14. The method of claim 11 , wherein the forming the sacrificial layer comprises forming a metal layer or an inorganic dielectric layer.

15. The method of claim 11 , wherein in the removing the sacrificial layer, an entirety of the sacrificial layer is removed.

16. The method of claim 11 , wherein the sacrificial layer is removed after the de-bonding the carrier.

17. The method of claim 11 , wherein the forming the sacrificial layer comprises forming an oxide layer.

18. The method of claim 11 , wherein the removing the sacrificial layer comprises etching.

19. The method of claim 11 , wherein the sacrificial layer is a substantially planar layer.

20. The method of claim 1 , wherein a portion of the sacrificial layer overlaps both a portion of the adhesive layer and a portion of the carrier.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hu Yu-Hsiang (James)
• Liu Chung-Shi
• Kuo Hung-Jui
• Cheng Ming-Da

Classifications

• H10P72/7448

  the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer · CPC title

• H10W70/099

  Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W72/9413

  on encapsulations · CPC title