Method and system for gallium nitride electronic devices using engineered substrates

Patent metadata

Field	Value
Publication number	US-2016013045-A1
Application number	US-201514617854-A
Country	US
Kind code	A1
Filing date	Feb 9, 2015
Priority date	Aug 10, 2012
Publication date	Jan 14, 2016
Grant date	—

Abstract

A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.

First claim

What is claimed is:

1 . A method for fabricating an electronic device, the method comprising:
providing an engineered substrate structure comprising a III-nitride seed layer; forming GaN-based functional layers coupled to the III-nitride seed layer; forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers; joining a carrier substrate opposing the GaN-based functional layers; removing at least a portion of the engineered substrate structure; forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers; and removing the carrier substrate.

2 . The method of claim 1 further comprising joining a device substrate to the second electrode prior to removing the carrier substrate.

3 . The method of claim 1 wherein the III-nitride seed layer comprises a GaN material.

4 . The method of claim 1 wherein the III-nitride seed layer comprises an n-type GaN-based material.

5 . The method of claim 1 further comprising epitaxially growing a III-nitride buffer layer coupled to the III-nitride seed layer and a III-nitride drift layer coupled to the III-nitride buffer layer.

6 . The method of claim 5 wherein forming GaN-based functional layers comprises epitaxially growing the GaN-based functional layers.

7 . The method of claim 1 wherein joining the carrier wafer to the GaN-based functional layers comprises:
forming an electrode structure coupled to at least a portion of one of the GaN-based functional layers;
forming a sacrificial bonding layer coupled to another portion of the one of the GaN-based functional layers and at least a portion of the electrode structure; and
bonding the carrier wafer to the sacrificial bonding layer.

8 . The method of claim 7 wherein removing the carrier substrate comprises removing the sacrificial bonding layer.

9 . The method of claim 1 wherein the engineered substrate comprises a handle wafer and a bonding layer coupled to the III-nitride seed layer, and wherein removing at least a portion of the engineered substrate structure comprises mechanically removing the handle wafer, chemically etching the bonding layer, and physically etching the III-nitride seed layer.

Assignees

• Avogy Inc

Inventors

• Nie Hui
• Disney Donald R
• Kizilyalli Isik C

Classifications

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/07336

  Soldering or alloying · CPC title