Plasma processing apparatus and measurement method

Patent metadata

Field	Value
Publication number	US-9658106-B2
Application number	US-201514700851-A
Country	US
Kind code	B2
Filing date	Apr 30, 2015
Priority date	May 5, 2014
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.

First claim

What is claimed is:

1. A plasma processing apparatus, comprising:
a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant;
a wall probe connected to an electrode installed inside the processing chamber to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber;
a window formed in a sidewall of the processing chamber;
an OES (Optical Emission Spectrometer) which receives light of the dopant existing in the plasma through the window to measure a light emission intensity of the dopant existing in the plasma; and
a control device which receives a measurement result obtained at the wall probe and a measurement result obtained at the OES to calculate a dose amount of the dopant implanted into the target substrate and to determine whether to perform a cleaning process for cleaning the process chamber.

2. The apparatus of claim 1 , wherein, if the density of charged particles corresponding to the change in voltage measured at the wall probe falls within a predetermined range, the control device calculates the dose amount using the measurement result obtained at the OES.

3. The apparatus of claim 1 , wherein the control device instructs the cleaning process for cleaning the processing chamber if the density of the charged particles corresponding to the change in voltage measured at the wall probe falls within a predetermined range and if the light emission intensity of the dopant measured at the OES is smaller than a first threshold value.

4. The apparatus of claim 1 , wherein the control device calculates the density of the charged particles in the plasma based on the light emission intensity measured at the OES for each type of particles included in the dopant existing in the plasma and instructs a cleaning process for cleaning the processing chamber if a difference between the calculated density of the charged particles and the density of the charged particles corresponding to the change in voltage measured at the wall probe is equal to or larger than a second threshold value.

5. The apparatus of claim 1 , wherein the control device is configured to correct the measurement result obtained at the OES, using the measurement result obtained at the wall probe.

6. A measurement method, comprising:
implanting a dopant into a target substrate loaded into a processing chamber using a plasma of a gas which contains an element used as the dopant;
measuring, by a wall probe, a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber;
receiving, by an OES (Optical Emission Spectrometer), light of the dopant existing in the plasma through a window formed in a sidewall of the processing chamber to measure a light emission intensity of the dopant existing in the plasma; and
receiving, by a control device, a measurement result obtained at the wall probe and a measurement result obtained at the OES to calculate a dose amount of the dopant implanted into the target substrate and to determine whether to perform a cleaning process for cleaning the process chamber.

7. The measurement method of claim 6 , further comprising:
correcting, by the control device, the measurement result obtained at the OES, using the measurement result obtained at the wall probe.

Assignees

• Tokyo Electron Ltd

Inventors

• Kobayashi Yuuki
• Ueda Hirokazu
• Yamashita Kohei
• Ventzek Peter L G

Classifications

• H10P74/20

  characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10P32/1204

  from a plasma phase · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title