Elastic wave device, filter, splitter, and communication device
US-2024339986-A1 · Oct 10, 2024 · US
US9654084B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9654084-B2 |
| Application number | US-201514601538-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 21, 2015 |
| Priority date | Nov 13, 2014 |
| Publication date | May 16, 2017 |
| Grant date | May 16, 2017 |
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The present invention relates to a capacitor for a SAW filter, the SAW filter, and a method of manufacturing thereof, and more specifically, to a capacitor for a SAW filter including a first metal layer formed on a substrate; an insulation layer formed on the first metal layer; and a second metal layer formed on the insulation layer and overlapped with partially or totally of the first metal layer, in which the insulation layer is formed to be extended to the top of an IDT formed on the substrate, the SAW filter on which such a capacitor for a SAW filter is mounted, and a method of manufacturing thereof.
Opening claim text (preview).
What is claimed is: 1. A Surface Acoustic Wave (SAW) filter comprising: an Inter-Digital Transducer (IDT) formed on a substrate; a first metal layer formed on the substrate; an insulation layer formed on the IDT and the first metal layer; a second metal layer formed on the insulation layer and partially or totally overlapped with the first metal layer; and a pad for connecting the IDT to outside, wherein the first metal layer is formed of a same material as the IDT and formed simultaneously with the IDT, and wherein the second metal layer is formed of a same material as the pad and formed simultaneously with the pad. 2. The SAW filter according to claim 1 , wherein the pad is formed on the insulation layer not to be overlapped with the second metal layer. 3. A method of manufacturing a Surface Acoustic Wave (SAW) filter, the method comprising the steps of: forming an Inter-Digital Transducer (IDT) and a first metal layer of a capacitor on a substrate; forming an insulation layer on the IDT and the first metal layer; and forming a pad and a second metal layer on the insulation layer; wherein the second metal layer is formed to be overlapped partially or totally with the first metal layer, wherein the IDT and the first metal layer are formed of a same metallic material and formed simultaneously, and wherein the pad and the second metal layer are formed of a same metallic material and formed simultaneously. 4. The method according to claim 3 , wherein the IDT and the first metal layer are formed of copper (Cu). 5. The method according to claim 3 , wherein the metallic material forming the pad and the second metal layer is different from the metallic material forming the IDT and the first metal layer. 6. The method according to claim 3 , wherein the pad and the second metal layer are formed of aluminum (Al) or gold (Au).
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