Nonvolatile memory device and method for manufacturing same
US-9224788-B2 · Dec 29, 2015 · US
Phase change memory cell with improved phase change material
US9653683B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9653683-B2 |
| Application number | US-201514983986-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2015 |
| Priority date | Aug 16, 2013 |
| Publication date | May 16, 2017 |
| Grant date | May 16, 2017 |
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Abstract
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A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.
First claim
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What is claimed is: 1. A phase change memory cell, comprising: a substrate; and a phase change material for performing a phase change function in the phase change memory cell, the phase change material having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase, and being formed from a mixture consisting of Gallium and Antimony and at least one of Silicon, Germanium, Arsenic, Selenium, Bismuth, Silver, and Gold, the mixture comprising three atomic % parts Gallium to seven atomic % parts Antimony. 2. The phase change memory cell of claim 1 , wherein the phase change material is formed from the mixture of Gallium and Antimony and at least two of Silicon, Germanium, Arsenic, Selenium, Bismuth, Silver, and Gold added to the mixture of Gallium and Antimony. 3. The phase change memory cell of claim 1 , wherein the phase change material is formed from the mixture of Gallium and Antimony and at least three of Silicon, Germanium, Arsenic, Selenium, Bismuth, Silver, and Gold added to the mixture of Gallium and Antimony. 4. The phase change memory cell of claim 1 , wherein the phase change material has an electrical contrast above an electrical contrast threshold and a switching time below a switching time threshold. 5. A method for forming a phase change memory cell, comprising: providing a substrate; and depositing a phase change material on the substrate the phase change material having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase, and being formed from a mixture consisting of Gallium and Antimony and at least one of Silicon, Germanium, Arsenic, Selenium, Indium, Tin, Bismuth, Silver, and Gold, the mixture comprising three atomic % parts Gallium to seven atomic % parts Antimony. 6. The method of claim 5 , wherein the phase change material is formed from the mixture of Gallium and Antimony and at least two of Silicon, Germanium, Arsenic, Selenium, Bismuth, Silver, and Gold added to the mixture of Gallium and Antimony. 7. The method of claim 5 , wherein the phase change material is formed from the mixture of Gallium and Antimony and at least three of Silicon, Germanium, Arsenic, Selenium, Bismuth, Silver, and Gold added to the mixture of Gallium and Antimony. 8. The method of claim 5 , wherein the phase change material has an electrical contrast above an electrical contrast threshold and a switching time below a switching time threshold. 9. A method for forming a phase change memory cell, comprising: providing a substrate; and depositing a mixture of Gallium, Antimony and at least one of, Silicon, Germanium, Arsenic, Selenium, Indium, Tin, Bismuth, Silver, and Gold on the substrate, the phase change material having a mass density change of less than 3 percent during a transition between an amorphous phase and a crystalline phase, and being foil led from a mixture consisting of Gallium and Antimony and at least one of Silicon, Germanium, Arsenic, Selenium, Indium, Tin, Bismuth, Silver, and Gold, the mixture comprising three atomic % parts Gallium to seven atomic % parts Antimony. 10. The method of claim 9 , wherein said depositing step comprises: adding at least two of Silicon, Germanium, Arsenic, Selenium, Indium, Tin, Bismuth, Silver, and Gold to the mixture; and depositing the mixture on the substrate. 11. The method of claim 9 , wherein the phase change material has an electrical contrast above an electrical contrast threshold and a switching time below a switching time threshold.
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9653683B2 cover?
- A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.
- Who is the assignee on this patent?
- IBM, Macronix Int Company Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L45/148. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 16 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).