Trench metal-insulator-metal capacitor with oxygen gettering layer

Patent metadata

Field	Value
Publication number	US-9653534-B2
Application number	US-201414572974-A
Country	US
Kind code	B2
Filing date	Dec 17, 2014
Priority date	Dec 17, 2014
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

First claim

What is claimed is:

1. A method comprising:
forming a deep trench capacitor in a semiconductor substrate, the deep trench capacitor comprising a first oxygen gettering layer on a first side of a node dielectric, the first oxygen gettering layer comprising an aluminum containing compound;
causing the first oxygen gettering layer to be in direct contact with the semiconductor substrate; and
forming an outer electrode between and in direct contact with the first oxygen gettering layer and the node dielectric, the outer electrode of the deer trench capacitor being positioned below the node dielectric.

2. The method of claim 1 , wherein the aluminum containing compound of the first oxygen gettering layer comprises titanium aluminum nitride, titanium aluminum carbide, tantalum aluminum nitride, tantalum aluminum carbide, tungsten aluminum nitride, tungsten aluminum carbide, cobalt aluminum nitride, or cobalt aluminum carbide.

3. The method of claim 1 , further comprising:
forming a second oxygen gettering layer on a second side of the node dielectric, the second oxygen gettering layer also comprising an aluminum containing compound; and
forming an inner electrode between and in direct contact with the second oxygen gettering layer and the node dielectric, the inner electrode of the deep trench capacitor being positioned above the node dielectric.

4. A method comprising:
forming a deep trench capacitor in a semiconductor substrate, the deep trench capacitor comprising a first oxygen gettering layer on a first side of a node dielectric, the first oxygen gettering layer comprising an aluminum containing compound;
causing the first oxygen gettering layer to be in direct contact with a polysilicon fill material; and
forming an inner electrode between and in direct contact with the first oxygen gettering layer and the node dielectric, the inner electrode of the deep trench capacitor being positioned above the node dielectric.

5. A structure comprising:
a first oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the first oxygen gettering layer comprising an aluminum containing compound;
an inner electrode on top of the insulating layer, the inner electrode comprising a metal; and
an outer electrode between and in direct contact with the first oxygen gettering layer and the insulating layer, the outer electrode comprising a metal.

6. The structure of claim 5 , wherein the aluminum containing compound of the oxygen gettering layer comprises titanium aluminum nitride, titanium aluminum carbide, tantalum aluminum nitride, tantalum aluminum carbide, tungsten aluminum nitride, tungsten aluminum carbide, cobalt aluminum nitride, or cobalt aluminum carbide.

7. The structure of claim 5 , further comprising;
a second oxygen gettering layer on an opposite side of the insulating layer.

8. The structure of claim 5 , further comprising:
a second oxygen gettering layer on an opposite side of the insulating layer; and
a second inner electrode between and in direct contact with the second oxygen gettering layer and the insulating layer, said second inner electrode comprising a metal.

Assignees

• IBM

Inventors

• Ando Takashi
• Cartier Eduard A
• Chudzik Michael P
• Dasgupta Aritra
• Ho Herbert L
• Kang Donghun
• Krishnan Rishikesh
• Narayanan Vijay
• Rim Kern

Classifications

• H10P36/03

  within silicon bodies · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10W76/48

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• H10P14/20 Primary

  of semiconductor materials · CPC title

• H01G4/005

  Electrodes · CPC title