Semiconductor device with thick bottom metal and preparation method thereof

Patent metadata

Field	Value
Publication number	US-9653383-B2
Application number	US-201514738271-A
Country	US
Kind code	B2
Filing date	Jun 12, 2015
Priority date	Mar 12, 2013
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.

First claim

The invention claimed is:

1. A semiconductor device with thick bottom metal comprising:
a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, wherein a plurality of metal bumps are formed at the front surface of the semiconductor chip, and the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer;
a die paddle, wherein the semiconductor chip is mounted on the die paddle with the back metal layer being directly attached on a front surface of the die paddle and a side surface of the die paddle is exposed;
a bottom plastic package layer covering a back surface of the die paddle; and
a first plastic package body portion covering the sidewalls of the semiconductor chip, the top plastic package layer and the back metal layer, wherein the first plastic package body is separated from the bottom plastic package layer by the die paddle.

2. The semiconductor device with thick bottom metal of claim 1 further comprises a second plastic package body portion covering sidewalls of the die paddle, wherein the first plastic package body portion, the second plastic package body portion and the bottom plastic package layer form a continuance structure.

3. A semiconductor device with thick bottom metal comprising:
a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, wherein a plurality of metal bumps are formed at the front surface of the semiconductor chip, and the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposed from the top plastic package layer;
a die paddle, wherein the semiconductor chip is mounted on the die paddle with the back metal layer being directly attached on a front surface of the die paddle, wherein a sidewall of a top portion of the die paddle is exposed;
a ring plastic package body surrounding a center portion of a bottom surface of the die paddle formed by filling a plastic package material into a recess ring formed at an edge of the back surface of the die paddle; and
a first plastic package body portion covering the sidewalls of the semiconductor chip, the top plastic package layer and the back metal layer, wherein the first package body is separated from the ring plastic package body by the top portion of the die paddle.

4. The semiconductor device with thick bottom metal of claim 3 further comprises a second plastic package body portion covering at least a sidewalls of a top portion of the die paddle, wherein the first plastic package body portion, the second plastic package body portion and the ring plastic package body form a continuance structure.

Assignees

• Alpha & Omega Semiconductor
• Alpha & Omega Semiconductor (Cayman) Ltd

Inventors

• Yilmaz Hamza
• Xue Yan Xun
• Lu Jun
• Lu Ming-Chen
• Huo Yan
• Lu Aihua

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title