Methods for forming metal organic tungsten for middle of the line (MOL) applications

Patent metadata

Field	Value
Publication number	US-9653352-B2
Application number	US-201414300773-A
Country	US
Kind code	B2
Filing date	Jun 10, 2014
Priority date	Apr 11, 2014
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

First claim

The invention claimed is:

1. A method of processing a substrate disposed within a substrate processing chamber, comprising:
depositing a tungsten seed layer via a plasma enhanced chemical vapor deposition (PECVD) process atop the substrate and directly onto sidewalls and a bottom of a feature formed in a first surface of a dielectric layer of the substrate;
exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten-containing barrier layer directly onto the tungsten seed layer, wherein a temperature of the processing chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is about 175 to about 225 degrees Celsius; and
depositing a tungsten fill layer directly onto the tungsten-containing barrier layer to fill the feature to the first surface via a plasma enhanced chemical vapor deposition process.

2. The method of claim 1 , wherein the feature has an aspect ratio of depth to width of greater than about 5:1.

3. The method of claim 1 , wherein the first gas further comprises a hydrogen-containing gas.

4. The method of claim 3 , wherein the hydrogen-containing gas is H 2 or NH 3 .

5. The method of claim 1 , wherein the first gas further comprises a carrier gas.

6. The method of claim 5 , wherein the carrier gas is argon, helium, or nitrogen.

7. The method of claim 6 , wherein a flow rate of the carrier gas is about 300 sccm to about 600 sccm.

8. The method of claim 1 , wherein the processing chamber is at a pressure of about 5 Torr to about 20 Torr.

9. The method of claim 1 , wherein the metal organic tungsten precursor is one of W(CO) 6 , CpW(CO) 2 NO, EtCpW(CO) 2 NO, Cp*W(CO) 3 NO, Cp 2 WH 2 , C 4 H 9 CNW(CO) 5 , (C 5 H 11 CN)W(CO) 5 , W(C 3 H 5 ) 4 , W(C 3 H 4 CH 3 ) 4 , W(C 4 H 6 ) 3 , W(C 4 H 6 ) 2 (CO) 2 , or W(C 4 H 6 )(CO) 4 .

10. The method of claim 1 , wherein the tungsten-containing barrier layer has a thickness of about 15 angstroms to about 40 angstroms.

11. A method of processing a substrate disposed within a substrate processing chamber, comprising:
depositing a tungsten seed layer via a plasma enhanced chemical vapor deposition (PECVD) process atop the substrate and directly onto sidewalls and a bottom of a feature formed in a first surface of a dielectric layer of the substrate;
depositing a tungsten-containing barrier layer directly onto the tungsten seed layer by exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor, wherein a temperature of the processing chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is about 175 to about 225 degrees Celsius; and
depositing a tungsten fill layer, via a plasma enhanced chemical vapor deposition process, directly onto the tungsten-containing barrier layer to fill the feature to the first surface.

12. The method of claim 11 , wherein the first gas further comprises a hydrogen-containing gas.

13. The method of claim 12 , wherein the hydrogen-containing gas is H 2 or NH 3 .

14. The method of claim 11 , wherein the first gas further comprises a carrier gas.

15. The method of claim 14 , wherein the carrier gas is argon, helium, or nitrogen.

16. The method of claim 15 , wherein a flow rate of the carrier gas is about 300 sccm to about 600 sccm.

17. The method of claim 11 , wherein the processing chamber is at a pressure of about 5 Torr to about 20 Torr.

18. The method of claim 11 , wherein the metal organic tungsten precursor is one of W(CO) 6 , CpW(CO) 2 NO, EtCpW(CO) 2 NO, Cp*W(CO) 3 NO, Cp 2 WH 2 , C 4 H 9 CNW(CO) 5 , (C 5 H 11 CN)W(CO) 5 , W(C 3 H 5 ) 4 , W(C 3 H 4 CH 3 ) 4 , W(C 4 H 6 ) 3 , W(C 4 H 6 ) 2 (CO) 2 , or W(C 4 H 6 )(CO) 4 .

19. The method of claim 11 , wherein the tungsten-containing barrier layer has a thickness of about 15 angstroms to about 40 angstroms.

20. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of processing a substrate disposed within a substrate processing chamber to be performed, the method comprising:
depositing a tungsten seed layer via a plasma enhanced chemical vapor deposition (PECVD) process atop the substrate and directly onto sidewalls and a bottom of a feature formed in a first surface of a dielectric layer of the substrate;
exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten-containing barrier layer directly atop the tungsten seed layer, wherein a temperature of the processing chamber during plasma enhanced atomic layer deposition (PEALD) formation of the tungsten-containing barrier layer is about 175 to about 225 degrees Celsius; and
depositing a tungsten fill layer directly over the tungsten-containing barrier layer to fill the feature to the first surface via a plasma enhanced chemical vapor deposition process.

Assignees

• Applied Materials Inc

Inventors

• Wu Liqi
• Yu Sang Ho
• Daito Kazuya
• Park Kie Jin
• Wu Kai
• Thompson David

Classifications

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/056 Primary

  by filling conductive material into holes, grooves or trenches · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title