Heated wafer carrier profiling

Patent metadata

Field	Value
Publication number	US-9653340-B2
Application number	US-201213483354-A
Country	US
Kind code	B2
Filing date	May 30, 2012
Priority date	May 31, 2011
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates.

First claim

The invention claimed is:

1. An apparatus for performing non-contact surface characterization comprising:
a processing chamber adapted to receive a carrier rotatable about an axis of rotation within the processing chamber, said carrier having a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation;
a gas distribution element positioned upwardly from the top surface of the carrier at a top end of the processing chamber, the gas distribution element adapted to supply process gases downward toward the top surface of the carrier, the gas distribution element defining an elongated slot within it, the elongated slot having a length dimension and a width dimension, the length dimension being longer than the width dimension, such that the elongated slot is elongated along the length dimension, the length dimension of the elongated slot being aligned along a radial direction with respect to the axis of rotation of the carrier;
a heater arranged to heat the carrier in the processing chamber; and
a surface characterization tool positioned upwardly from the top surface of the carrier, said surface characterization tool being operative to move along the radial direction over a plurality of positions relative to the top surface of the carrier and/or the wafer and further adapted to produce characterization signals over the plurality of positions on at least a portion of said carrier and/or on at least a portion of said major surface of said wafer as said carrier rotates about the axis of rotation, the characterization signals representing the intensity of radiation emitted from the top surface of the heated carrier;
wherein the apparatus is configured to regulate temperature of the heater based on the characterization signals produced by the surface characterization tool; and
wherein the elongated slot in the gas distribution element is adapted to permit the surface characterization tool to view the carrier at each of the plurality of positions over which the surface characterization tool is operative to move.

2. The apparatus of claim 1 wherein the processing chamber is a chemical vapor deposition chamber.

3. The apparatus of claim 1 wherein the surface characterization tool is selected from a pyrometer, reflectometer, a combined pyrometer/reflectometer, a combined deflectometer/reflectometer/temperature tool, ellipsometer, photoluminescence spectrometer, camera, electroluminescence spectrometer, surface acoustic wave generator, or any combination thereof.

4. The apparatus of claim 3 wherein the pyrometer is a pyrometer which operates at a wavelength of from about 400 nm to about 8 μm.

5. The apparatus of claim 1 wherein the surface characterization tool measures a surface property selected from temperature, reflectance, photoluminescence, electroluminescence, emissivity, and absence or presence of residual deposits from a chemical vapor deposition run.

6. The apparatus of claim 1 wherein the carrier is holding at least one semiconductor wafer.

7. The apparatus of claim 6 wherein the surface characterization tool measures a surface property selected from temperature of the wafer surface, bowing of the semiconductor wafer, warping of the semiconductor wafer, and tilting of the semiconductor wafer.

8. The apparatus of claim 6 wherein the surface characterization tool is selected from a pyrometer, a combined pyrometer/reflectometer, a combined deflectometer/reflectometer/temperature tool, ellipsometer, photoluminescence spectrometer, camera, electroluminescence spectrometer, surface acoustic wave generator, or any combination thereof.

9. The apparatus of claim 8 wherein the pyrometer is a pyrometer which operates at a wavelength of from about 400 nm to about 8 μm.

10. The apparatus claim 1 which further comprises a computer having a memory for storing a set of computer instructions, said computer coupled to the surface characterization tool for determining values for position-dependent parameters characterizing the top surface of the carrier based on the characterization signals.

11. The apparatus of claim 10 wherein the set of computer instructions include instructions for correlating the characterization signals to its positions on the top surface of the carrier, instructions for comparing characterization signals of the top surface of the carrier to a reference carrier top surface on a position by position basis, and instructions for displaying the characterization signals to its positions on the top surface of the carrier in a visually perceptible manner.

12. The apparatus of claim 10 wherein a plurality of carriers are sequentially characterized in the chamber, the set of computer instructions include instructions for correlating the characterization signals on a position by position basis of the top surface of each carrier separately characterized in the chamber, instructions for storing the characterization signals on a position by position basis from the top surface of each carrier sequentially characterized in the chamber in a database, instructions for performing a analysis on the characterization signals of the plurality of carriers on a position by position basis, and instructions for displaying a surface characteristic map from the characterization signals on a position by position basis from the top surface of each carrier sequentially characterized in the chamber.

13. The apparatus of claim 10 wherein the set of computer instructions include instructions for storing the position-dependent characterization signals during each process step of a chemical vapor deposition run; instructions for obtaining position-dependent characterization signals from a calibration wafer; instructions for comparing the position-dependent characterization signals from each process step of the chemical vapor deposition run to a predetermined set of optimal position-dependent characterization signals; instructions for comparing the position-dependent characterization signals from each process step of the chemical vapor deposition run to a set of position-dependent characterization signals from a calibration wafer; instructions for adjusting the process steps of a chemical vapor deposition run based on the comparison of the position-dependent characterization signals from each process step of the chemical vapor deposition run to the set of position-dependent characterization signals from a calibration wafer; and instructions for providing a feedback loop between the surface characterization tool and a heater such that the temperature of the carrier and/or wafer is regulated.

14. The apparatus of claim 1 , further comprising a window covering the elongated slot in the gas distribution element, wherein the surface characterization tool measures the intensity of the radiation emitted from the top surface of the heated carrier through the window.

15. The apparatus of claim 1 , wherein the elongated slot extends radially outwardly from the axis of rotation of the carrier.

16. The apparatus of claim 15 , wherein the elongated slot extends over a half of a diameter of the carrier, from the axis of rotation to a radially outer edge of the carrier.

Assignees

• Boguslavskiy Vadim
• Mangum Joshua
• King Matthew
• Marcelo Earl
• Armour Eric A
• Gurary Alexander I
• Quinn William E
• Tas Guray
• Veeco Instr Inc

Inventors

• Boguslavskiy Vadim
• Mangum Joshua
• King Matthew
• Marcelo Earl
• Armour Eric A
• Gurary Alexander I
• Quinn William E
• Tas Guray

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/7618 Primary

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title