Method for removing native oxide and residue from a III-V group containing surface

Patent metadata

Field	Value
Publication number	US-9653291-B2
Application number	US-201414540104-A
Country	US
Kind code	B2
Filing date	Nov 13, 2014
Priority date	Nov 13, 2014
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

First claim

We claim:

1. A method for removing native oxides from a material layer disposed on a substrate, comprising:
supplying an inert gas to a surface of a material layer disposed on a substrate to alter bonding structures of native oxide on the surface of the material layer for a first period of time at a first temperature, wherein the material layer is a III-V group containing layer;
supplying a H 2 gas and an inert gas to remove the native oxide from the material layer for a second period of time at a second temperature; and
supplying a H 2 gas to remove residual oxide from the material layer for a third period of time while maintaining the substrate at a third temperature, wherein the third temperature is higher than the first and the second temperature.

2. The method for claim 1 , further comprising:
forming a III-V group material on the material layer while maintaining the substrate at the third temperature.

Assignees

• Applied Materials Inc

Inventors

• Yan Chun
• Bao Xinyu

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P70/12

  by dry cleaning only (H10P70/52 takes precedence) · CPC title

• H10P14/3414

  being group IIIA-VIA materials · CPC title

• H10P14/3214

  being Group IIIA-VA semiconductors · CPC title