Pressure sensor device with high sensitivity and high accuracy

Patent metadata

Field	Value
Publication number	US-9651441-B2
Application number	US-201514704012-A
Country	US
Kind code	B2
Filing date	May 5, 2015
Priority date	May 15, 2014
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

The voltages output from a low-pressure MEMS sensor are increased by increasing the sensitivity of the sensor. Sensitivity is increased by thinning the diaphragm of the low pressure sensor device with corner trench. Nonlinearity increased by thinning the diaphragm is reduced by simultaneously creating a cross stiffener to the bottom side of the diaphragm. A rim, anchors, and a stiffener pad can also be added to further stiffen the thinner diaphragm and further reduce pressure nonlinearity.

First claim

What is claimed is:

1. A pressure sensing element comprising:
a first substrate having top and bottom opposing sides;
a diaphragm formed into the bottom of the first substrate, the diaphragm having top and bottom opposing sides, the top side of the diaphragm comprising spaced-apart piezoresistors coupled to each other to form a Wheatstone bridge;
a rim, which is formed as part of the bottom of the diaphragm and which supports and stiffens a perimeter region of the bottom of the diaphragm; and
a cross-stiffener, formed as part of the diaphragm on the bottom side of the diaphragm whereby the rim and the cross-stiffener improve the diaphragm's accuracy.

2. The pressure sensing element of claim 1 , further comprising a second substrate attached to the bottom of the first substrate.

3. The pressure sensing element of claim 1 , further comprising a second substrate attached to the bottom of the first substrate, the second substrate having a hole, which is aligned with the diaphragm and configured to conduct a fluid toward the bottom side of the diaphragm.

4. The pressure sensing element of claim 3 , further comprising a cap that covers the top side of the diaphragm and which defines a cavity above the top side of the diaphragm.

5. The pressure sensing element of claim 1 , wherein the diaphragm is substantially square and wherein the cross-stiffener comprises first and second substantially orthogonal beam sections that extend between the rim.

6. The pressure sensing element of claim 1 , further comprising:
anchors, which are formed, with a minimum thickness of 7 microns to prevent leakage current from passing into the epitaxial layer through P-N junctions, as part of the bottom of the diaphragm and located between an end of a beam section and the rim; and
wherein the cross-stiffener comprises first and second substantially orthogonal beam sections, which are formed as part of the bottom of the diaphragm, each beam section having first and second opposing ends.

7. The pressure sensing element of claim 6 , wherein the piezoresistors are formed into the top side of the diaphragm and located above the anchors formed as part of the bottom side of the diaphragm.

8. The pressure sensing element of claim 1 , further comprising a stiffener pad formed as part of the bottom of the diaphragm and which is substantially centered on the bottom side of the diaphragm, and wherein the cross-stiffener extends from the stiffener pad to the rim.

9. The pressure sensing element of claim 8 , wherein the stiffener pad has a shape which is substantially square.

10. The pressure sensing element of claim 8 , wherein the stiffener pad has a shape which is substantially circular.

11. The pressure sensing element of claim 6 , further comprising a stiffener pad formed as part of the bottom of the diaphragm and which is substantially centered on the bottom side of the diaphragm, and wherein the cross-stiffener extends from the stiffener pad to the anchors.

12. The pressure sensing element of claim 11 , wherein the stiffener pad has a shape which is substantially square.

13. The pressure sensing element of claim 11 , wherein the stiffener pad has a shape which is substantially circular.

14. The pressure sensing element of claim 1 , wherein the diaphragm has a thickness between about 2.5 and about 5.0 microns and wherein the cross-stiffener has a different thickness, which is between about 5.0 and about 15.0 microns.

15. The pressure sensing element of claim 1 , wherein the cross-stiffener is formed from a material that is different from the material from which the diaphragm is formed.

16. A pressure sensor comprising:
a housing having a pocket; and
a pressure sensing element located in the pocket, the pressure sensing element comprising:
a first substrate having top and bottom opposing sides;
a diaphragm formed into the bottom of the first substrate, the diaphragm having top and bottom opposing sides, the top side of the diaphragm comprising spaced-apart piezoresistors coupled to each other to form a Wheatstone bridge;
a rim, which is formed as part of the bottom of the diaphragm and which supports and stiffens a perimeter region of the bottom of the diaphragm; and
a cross-stiffener formed as part of the diaphragm on the bottom side of the diaphragm whereby the rim and the cross-stiffener improve the diaphragm's accuracy.

17. A method of forming a pressure sensing element, the method comprising the steps of:
forming an epitaxial layer on a top side of a first substrate, which comprises silicon;
performing a first etch on a bottom side of the first substrate, the first etch forming a cavity in a bottom side of the first substrate that extends upwardly in the first substrate to the epitaxial layer; and
performing a second etch of a portion of the epitaxial layer that is exposed by the cavity, the second etch removing material from the epitaxial layer to define a cross-stiffener, a rim, and a diaphragm formed of the same material such that the rim and the cross-stiffener improve the diaphragm's accuracy.

18. The method of claim 17 , further comprising the step of:
performing a corner rounding etch step between the first and second etch steps, the corner rounding etch step comprising a dry etch, which rounds interior corners formed by the first etch step.

19. The method of claim 17 , wherein the step of performing a second etch defines a diaphragm thickness between about 2.5 and 5.0 microns and defines cross-stiffener thickness between about 5.0 and about 15.0 microns.

20. The method of claim 17 , further comprising the step of: attaching the first substrate to a second substrate, which supports the first substrate.

21. The method of claim 17 , further comprising the step of attaching the first substrate to a second substrate having a hole aligned with the diaphragm, the hole allowing a fluid to be applied to the diaphragm.

22. The method of claim 21 , further comprising the step of attaching a cap to the top side of the first substrate, the cap defining a cavity above the top side of the diaphragm.

Assignees

• Continental automotive systems inc

Inventors

• Chiou Jen-Huang Albert
• Chen Shiuh-Hui Steven

Classifications

• G01L9/0054 Primary

  integral with a semiconducting diaphragm · CPC title

• B81B3/00

  Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes (B81B5/00 takes precedence) · CPC title

• B81B2203/0127

  Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

• B81C1/00

  Manufacture or treatment of devices or systems in or on a substrate (B81C3/00 takes precedence) · CPC title

• G01L9/0047

  Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness · CPC title