Thin film transistor substrate and method of manufacturing a thin film transistor substrate
US-2015162354-A1 · Jun 11, 2015 · US
US9647005B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9647005-B2 |
| Application number | US-201514958011-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 3, 2015 |
| Priority date | Jan 28, 2015 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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A display device includes: a gate electrode, a gate line, and data lines on a substrate, the data lines in a same layer as the gate line; a gate insulating layer on the gate line; a semiconductor member on the gate insulating layer; an etch stopper layer on the semiconductor member and the gate insulating layer; a first passivation layer on the etch stopper layer; a source electrode on the first passivation layer and the etch stopper layer and connected to the data lines; a drain electrode on the etch stopper layer; a common electrode on the first passivation layer and separated from the source electrode and the drain electrode; a second passivation layer on the source electrode, the drain electrode and the common electrode; and a pixel electrode on the second passivation layer and connected to the drain electrode.
Opening claim text (preview).
What is claimed is: 1. A display device, comprising: a substrate; a gate electrode and a gate line disposed on the substrate; data lines disposed on the substrate in a same layer as the gate line, and electrically separated from the gate line; a gate insulating layer disposed on the gate line, the gate electrode, and the data lines; a semiconductor member disposed on the gate insulating layer; an etch stopper layer disposed on the semiconductor member and the gate insulating layer; a first passivation layer disposed on the etch stopper layer; a source electrode disposed directly on top of the first passivation layer and the etch stopper layer, the source electrode electrically connected to the data lines; a drain electrode disposed directly on top of the etch stopper layer and electrically separated from the source electrode; a common electrode disposed directly on the first passivation layer and electrically separated from the source electrode and the drain electrode; a second passivation layer disposed directly on the source electrode, the drain electrode and the common electrode; and a pixel electrode disposed on the second passivation layer and electrically connected to the drain electrode. 2. The display device of claim 1 , wherein the first passivation layer comprises an organic material. 3. The display device of claim 1 , wherein the semiconductor member comprises a metal oxide.
the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title
comprising organic materials, e.g. plastics or resins · CPC title
on active surfaces of flip-chip devices, e.g. underfills · CPC title
of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills · CPC title
Electricity · mapped topic
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