Power storage device and manufacturing method thereof
US-9590277-B2 · Mar 7, 2017 · US
US9646771B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9646771-B2 |
| Application number | US-201313797023-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | Mar 26, 2012 |
| Publication date | May 9, 2017 |
| Grant date | May 9, 2017 |
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Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane. The power storage element further includes a positive electrode active material layer over the positive electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer. An electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer is provided. The electrolyte layer may be a solid electrolyte layer.
Opening claim text (preview).
What is claimed is: 1. A power storage device comprising: a substrate; an insulating film over the substrate; a first power storage element and a second power storage element which are located over the substrate, each of the first power storage element and the second power storage element comprising: a positive electrode and a negative electrode over the substrate, the positive electrode and the negative electrode being arranged in a same plane; an electrolyte layer over the positive electrode and the negative electrode, the electrolyte layer being in contact with the positive electrode and the negative electrode; and a first layer over the electrolyte layer, the first layer comprising an insulating material and sealing the electrolyte layer, the positive electrode, and the negative electrode with the substrate; and first to fifth switches over the substrate, wherein the first power storage element is electrically connected to the second power storage element through the first to fifth switches, wherein the first to fifth switches are configured to change the electrical connection of the first power storage element with the second power storage element between a parallel connection and a series connection, wherein, in each of the first power storage element and the second power storage element, the positive electrode comprises a positive electrode current collector layer and a positive electrode active material layer over the positive electrode current collector layer, and the negative electrode comprises a negative electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer, wherein the positive electrode active material layer covers the positive electrode current collector and is directly in contact with the insulating film, wherein the negative electrode active material layer covers the negative electrode current collector and is directly in contact with the insulating film, and wherein the electrolyte layer covers part of the positive electrode and part of the negative electrode so that the first layer is in contact with the positive electrode active material layer and the negative electrode active material layer. 2. The power storage device according to claim 1 , wherein first to fifth switches are transistors. 3. An electrical device comprising the power storage device according to claim 1 . 4. A power storage device comprising: a substrate; an insulating film over the substrate; a first power storage element and a second power storage element which are located over the substrate, each of the first power storage element and the second power storage element comprising: a positive electrode and a negative electrode over the substrate, the positive electrode and the negative electrode being arranged in a same plane; an electrolyte layer over the positive electrode and the negative electrode, the electrolyte layer being in contact with the positive electrode and the negative electrode; and a first layer over the electrolyte layer, the first layer comprising an insulating material and sealing the electrolyte layer, the positive electrode, and the negative electrode with the substrate; and first to fifth transistors each comprising a semiconductor layer, wherein the first power storage element is electrically connected to the second power storage element through the first to fifth transistors, wherein the first to fifth transistors are configured to change the electrical connection of the first power storage element with the second power storage element between a parallel connection and a series connection, wherein the semiconductor layers of the first to fifth transistors are located over the substrate and under the first power storage element and the second power storage element, the insulating film interposed between the semiconductor layers and the first power storage element and the second power storage element, wherein, in each of the first power storage element and the second power storage element, the positive electrode comprises a positive electrode current collector layer and a positive electrode active material layer over the positive electrode current collector layer, and the negative electrode comprises a negative electrode current collector layer and a negative electrode active material layer over the negative electrode current collector layer, wherein the positive electrode active material layer covers the positive electrode current collector layer and is directly in contact with the insulating film, and wherein the negative electrode active material layer covers the negative electrode current collector layer and is directly in contact with the insulating film. 5. The power storage device according to claim 4 , wherein the electrolyte layer is a solid electrolyte comprising lithium. 6. The power storage device according to claim 4 , wherein the positive electrode current collector layer and the negative electrode current collector layer comprise the same material. 7. The power storage device according to claim 4 , wherein the electrolyte layer covers part of the positive electrode and part of the negative electrode so that the first layer is in contact with the positive electrode active material layer and the negative electrode active material layer. 8. The power storage device according to claim 4 , wherein the positive electrode of the first power storage element is electrically connected to the negative electrode of the second power storage element. 9. The power storage device according to claim 4 further comprising: a third and a fourth power storage element connectable with each other in series or in parallel, wherein the first and the second power storage element are part of a first power storage element array, wherein the third and the fourth power storage element are part of a second power storage element array, and wherein the first power storage element array and the second power storage element array are connected in parallel. 10. An electrical device comprising the power storage device according to claim 4 . 11. A power storage device comprising: a substrate; an insulating film over the substrate; a first power storage element and a second power storage element which are located over the substrate, each of the first power storage element and the second power storage element comprising: a positive electrode and a negative electrode on a layer over the substrate, the positive electrode and the negative electrode being arranged in a same plane; an electrolyte layer over the positive electrode and the negative electrode, the electrolyte layer being in contact with the positive electrode and the negative electrode; and a first layer over the electrolyte layer, the first layer comprising an insulating material and sealing the electrolyte layer, the positive electrode, and the negative electrode with the substrate; and first to fifth transistors each comprising a semiconductor layer, wherein the first and second transistors are electrically connected in series between the positive electrode of the first power storage element and the positive electrode of the second power storage element, wherein the third and fourth transistors are electrically connected in series between the negative electrode of the first power storage element and the negative electrode of the second power storage element, wherein the third, firth, and second transistors are electrically connected in series between the negative electrode of the first power storage element and the positive electrode of the second power storage element, wherein the semiconductor layers of
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