Power storage device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9401525-B2
Application number	US-72396110-A
Country	US
Kind code	B2
Filing date	Mar 15, 2010
Priority date	Mar 20, 2009
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

A power storage device having a small thickness is manufactured. A manufacturing method of the power storage device includes: forming a first layer and a second layer over a first substrate; forming a first insulating layer, a positive electrode and a negative electrode over the second layer; forming a solid electrolyte layer over the first insulating layer, the positive electrode, and the negative electrode; forming a sealing layer to cover the solid electrolyte layer; forming a planarization film and a support over the sealing layer; separating the first layer and the second layer from each other so that the second layer, the positive electrode, the negative electrode, the solid electrolyte layer, the sealing layer, the planarization film, and the support are separated from the first substrate; attaching the separated structure to a second substrate which is flexible; and separating the support from the planarization film.

First claim

What is claimed is:

1. A power storage device comprising:
a flexible substrate;
a first insulating layer on a first surface of the flexible substrate;
a second insulating layer on the first insulating layer;
a positive electrode on the second insulating layer, the positive electrode including:
a positive-electrode current collecting layer over and in contact with a first region of an upper surface of the second insulating layer; and
a positive-electrode active material layer on the positive-electrode current collecting layer;
a negative electrode on the second insulating layer, the negative electrode including:
a negative-electrode current collecting layer over and in contact with a second region of the upper surface of the second insulating layer; and
a negative-electrode active material layer on the negative-electrode current collecting layer;

a solid electrolyte layer over and in contact with a third region of the upper surface of the second insulating layer, the solid electrolyte layer covering an upper surface and a side surface of the positive electrode and an upper surface and a side surface of the negative electrode; and
a sealing layer covering the solid electrolyte layer,
wherein the third region is positioned between the first region and the second region of the upper surface of the second insulating layer.

2. The power storage device according to claim 1 , wherein the power storage device is an all-solid-state power storage device.

3. The power storage device according to claim 1 , wherein the positive-electrode current collecting layer comprises a material selected from the group consisting of platinum, titanium, aluminum, copper, and gold.

4. The power storage device according to claim 1 , wherein the negative-electrode current collecting layer comprises a material selected from the group consisting of platinum, titanium, aluminum, copper, and gold.

5. The power storage device according to claim 1 , further comprising a planarization film over the sealing layer.

6. The power storage device according to claim 5 , wherein the planarization film comprises an organic resin.

7. The power storage device according to claim 5 , wherein the planarization film is a structure in which a fibrous body is impregnated with an organic resin.

8. The power storage device according to claim 1 , wherein the sealing layer is in contact with the upper surface of the second insulating layer.

9. The power storage device according to claim 1 , wherein the first insulating layer comprises silicon oxide.

10. A power storage device comprising:
a flexible substrate;
a silicon oxide layer on a first surface of the flexible substrate;
an insulating layer on the silicon oxide layer;
a positive electrode over and in contact with a first region of an upper surface of the insulating layer;
a negative electrode over and in contact with a second region of the upper surface of the insulating layer;
a solid electrolyte layer over and in contact with a third region of the upper surface of the insulating layer, the solid electrolyte layer covering an upper surface and a side surface of the positive electrode and an upper surface and a side surface of the negative electrode; and
a sealing layer covering the solid electrolyte layer,
wherein the third region is positioned between the first region and the second region of the upper surface of the insulating layer.

11. The power storage device according to claim 10 , wherein the power storage device is an all-solid-state power storage device.

12. The power storage device according to claim 10 , further comprising a planarization film over the sealing layer.

13. The power storage device according to claim 12 , wherein the planarization film comprises an organic resin.

14. The power storage device according to claim 12 , wherein the planarization film is a structure in which a fibrous body is impregnated with an organic resin.

15. The power storage device according to claim 10 , wherein the sealing layer is in contact with the upper surface of the insulating layer.

16. The power storage device according to claim 10 , wherein the negative electrode includes a lithium film.

17. A power storage device comprising:
a flexible substrate;
a silicon oxide layer on a first surface of the flexible substrate;
an insulating layer on the silicon oxide layer;
a positive electrode over and in contact with a first region of an upper surface of the insulating layer, the positive electrode including a positive-electrode current collecting layer and a positive-electrode active material layer;
a negative electrode over and in contact with a second region of the upper surface of the insulating layer, the negative electrode including a negative-electrode current collecting layer and a negative-electrode active material layer;
a solid electrolyte layer on and in contact with a third region of the upper surface of the insulating layer, an upper surface and a side surface of the positive electrode, and an upper surface and a side surface of the negative electrode; and
a sealing layer and the insulating layer surrounding the positive electrode, the negative electrode, and the solid electrolyte layer,
wherein the third region is positioned between the first region and the second region of the upper surface of the insulating layer.

18. The power storage device according to claim 17 , wherein the power storage device is an all-solid-state power storage device.

19. The power storage device according to claim 17 , wherein the positive-electrode current collecting layer comprises a material selected from the group consisting of platinum, titanium, aluminum, copper, and gold.

20. The power storage device according to claim 17 , wherein the negative-electrode current collecting layer comprises a material selected from the group consisting of platinum, titanium, aluminum, copper, and gold.

21. The power storage device according to claim 17 , further comprising a planarization film over the sealing layer.

22. The power storage device according to claim 21 , wherein the planarization film comprises an organic resin.

23. The power storage device according to claim 21 , wherein the planarization film is a structure in which a fibrous body is impregnated with an organic resin.

24. The power storage device according to claim 17 , wherein the sealing layer is in contact with the upper surface of the insulating layer.

25. The power storage device according to claim 17 , wherein the negative electrode further includes a lithium film on the negative-electrode active material layer.

26. The power storage device according to claim 1 , wherein the negative electrode further includes a lithium film on the negative-electrode active material layer.

27. The power storage device according to claim 1 , wherein the upper surface of the second insulating layer is parallel to the first surface of the flexible substrate.

28. The power storage device according to claim 10 , wherein the upper surface of the insulating layer is parallel to the first surface of the flexible substrate.

29. The power storage device according to claim 17 , wherein the upper surface of the insulating layer is parallel to the first surface of the flexible substrate.

Assignees

• Izumi Konami
• Semiconductor Energy Lab

Inventors

• Izumi Konami

Classifications

• H01G11/28 Primary

  arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives · CPC title

• H01M10/0585

  of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators · CPC title

• H01G9/155

  Electricity · mapped topic

• Y10T29/49115

  including coating or impregnating · CPC title

• H01G11/80

  Gaskets; Sealings · CPC title