Nanowire field-effect transistor biosensor with improved sensitivity

Patent metadata

Field	Value
Publication number	US-9645135-B2
Application number	US-201113991413-A
Country	US
Kind code	B2
Filing date	Dec 2, 2011
Priority date	Dec 3, 2010
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

The present invention is directed to a multiwire nanowire field effect transistor (nwFET) device for the measurement. The device includes a sensing nanowire having a first end and a second end and a nanowire FET having a first end and a second end, wherein the first end of the sensing nanowire is connected to the nanowire FET to form a node. Additionally, the first end of the nanowire FET is connected to a source electrode, the second end of the nanowire FET is connected to a drain electrode, and the second end of the sensing nanowire is connected to a base electrode. The sensing nanowire is derivatized with a plurality of immobilized capture probes that are specific for a target(s) of interest. The device is used to detect biomolecules or to detect the change in the ionic environment of a sample. In a further embodiment, the sensing nanowire is derivatized with amino, carboxyl or hydroxyl groups. Upon a change in ionic environment, or binding of a molecule to the sensing nanowire, the sensing nanowire current (I B ) fluctuates. This fluctuation is amplified and readout as the nanowire FET drain current (I D ). Accordingly, the present invention provides for label-free detection of biomolecules and may find use as a point-of-care diagnostic device.

First claim

The invention claimed is:

1. A multiwire nanowire field effect transistor (nwFET) device comprising (a) a source electrode, (b) a drain electrode, (c) a base electrode, (d) a first nanowire having a first terminal end and a second terminal end and (e) a second nanowire having a first terminal end and a second terminal end, wherein the first nanowire and the second nanowire each comprise at least one semiconductor material, the first terminal end of the first nanowire is connected to and contacts the second nanowire to form a node, the first terminal end of the second nanowire is connected to and contacts the source electrode, the second terminal end of the second nanowire is connected to and contacts the drain electrode, and the second terminal end of the first nanowire is connected to and contacts the base electrode,
wherein the second nanowire is passivated,
wherein the first nanowire includes a sensing surface that is derivatized with a plurality of immobilized capture probes, and the sensing surface is devoid of passivation.

2. The nwFET device of claim 1 , wherein the first terminal end of the first nanowire is connected to and contacts the second nanowire at an angle between about 10° and 170° to form the node.

3. The nwFET device of claim 1 , wherein the at least one semiconductor material is selected from the group consisting of a group IV semiconductor material, a group III-V semiconductor material, a group II-VI semiconductor material, a group I-VII semiconductor material, a group IV-VI semiconductor material, a group V-VI semiconductor material, a group II-V semiconductor material, oxides, organic semiconductor material and a layered semiconductor material.

4. The nwFET device of claim 3 , wherein the semiconductor material is silicon.

5. The nwFET device of claim 1 , wherein the first nanowire is orthogonal to the second nanowire.

6. The nwFET device of claim 1 , wherein the first nanowire and the second nanowire have about the same dimensions.

7. The nwFET device of claim 1 , wherein a width of the first nanowire and the second nanowire are independently each within the range of about 10 nm to about 3000 nm, or within the range of about 50 nm to about 1000 nm, or within the range of about 100 nm to about 500 nm.

8. The nwFET device of claim 1 , wherein a width of the first nanowire and the second nanowire are independently selected from the group consisting of about 10 nm, about 25 nm, about 50 nm, about 75 nm, about 100 nm, about 150 nm, about 200 nm, about 250 nm, about 300 nm, about 350 nm, about 400 nm, about 450 nm, about 500 nm, about 1000 nm, about 2000 nm and about 3000 nm.

9. The nwFET device of claim 1 , wherein a length of the first nanowire and the second nanowire are independently selected from the group consisting of about 50 nm, about 60 nm, about 70 nm, about 80 nm, about 90 nm, about 100 nm, about 110 nm, about 120 nm, about 150 nm, about 200 nm, about 500 nm, about 1 μm, about 2 μm, about 3 μm, about 4 μm, about 5 μm, about 10 μm, about 20 μm and about 30 μm.

10. The nwFET device of claim 1 , wherein each electrode is fabricated from a metal, metal alloy, metal oxide, metal nitride or conducting polymer.

11. The nwFET device of claim 2 , wherein the semiconductor material is initially present as a semiconductor substrate.

12. The nwFET device of claim 11 , wherein the semiconductor substrate comprises a silicon layer and a buried oxide layer.

13. The nwFET device of claim 1 , wherein the immobilized capture probes comprise free amino groups, free carboxyl groups, free hydroxyl groups, or a combination thereof.

14. The nwFET device of claim 1 , wherein the first nanowire is derivatized with a plurality of oligonucleotide capture probes.

15. The nwFET device of claim 1 , comprising a third nanowire having a first terminal end and a second terminal end, wherein the first terminal end of the third nanowire is connected to and contacts the second nanowire to form a node, and the second terminal end of the third nanowire is connected to a second base electrode.

16. The nwFET device of claim 1 , wherein the plurality of immobilized capture probes bind one or more oligonucleotides, proteins, peptides, antigens, antibodies, or fragments thereof.

17. The nwFET device of claim 1 , wherein the immobilized capture probes are homogeneous for a specific target.

18. The nwFET device of claim 1 , wherein the immobilized capture probes are heterogeneous for at least two targets, at least three targets, or at least four targets.

19. The nwFET device of claim 14 , wherein sequences of the oligonucleotide probes are specific for RNA or DNA.

20. The nwFET device of claim 19 , wherein the RNA is influenza RNA.

21. A method for detecting a change in pH in a sample, comprising:
measuring a baseline drain current (I D ) associated with the device of claim 1 ;
introducing a test sample onto the nwFET device of claim 1 , wherein the first nanowire of the device is derivatized with free amino groups; and
measuring a change in I D after introduction of the sample, wherein the change in I D is associated with a change in pH of the test sample.

22. The method of claim 21 , wherein the sample is an electrolyte solution or a physiological sample.

23. The method of claim 21 , wherein the physiological sample is a blood sample.

24. A method for detecting the presence or absence of a molecule in a sample, comprising:
determining a baseline drain current (I D ) associated with the device of claim 1 ;
introducing a test sample onto the nwFET device of claim 1 , wherein the first nanowire of the device is derivatized with immobilized capture probes specific for an analyte of interest; and measuring the I D after introduction of the sample, wherein a change in I D from baseline is associated with the analyte of interest binding the device.

25. The method of claim 24 , wherein the sample is an electrolyte solution or a physiological sample.

26. The method of claim 25 , wherein the physiological sample is a blood sample.

27. The method of claim 24 , wherein the analyte of interest is influenza RNA or prostate specific antigen (PSA).

28. A plurality of nwFET devices of claim 1 , connected in series.

29. The device of claim 15 , further comprising a fourth nanowire having a first terminal end and a second terminal end, wherein the first terminal end of the fourth nanowire is connected to and contacts the second nanowire to form a node, and the second terminal end of the fourth nanowire is connected to a third base electrode.

30. The device of claim 15 , wherein the first nanowire and the third nanowire are connected to the second nanowire at the same node.

31. The nwFET device of claim 1 , wherein the first nanowire and the second nanowire are a monolithic structure.

Assignees

• Shin Kyeong-Sik
• Chui Chi On
• Univ California

Inventors

• Shin Kyeong-Sik
• Chui Chi On

Classifications

• G01N33/50 Primary

  Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing (measuring or testing processes involving enzymes or microorganisms, compositions or test papers therefor; processes for forming such compositions, condition responsive control in microbiological or enzymological processes C12Q) · CPC title

• H01L29/78

  Electricity · mapped topic

• G01N27/4146 Primary

  involving nanosized elements, e.g. nanotubes, nanowires · CPC title

• B82Y15/00

  Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title

• Y10T436/143333

  Saccharide [e.g., DNA, etc.] · CPC title