Oxide semiconductor depositing apparatus and method of manufacturing oxide semiconductor using the same

Patent metadata

Field	Value
Publication number	US-9644270-B2
Application number	US-201414513463-A
Country	US
Kind code	B2
Filing date	Oct 14, 2014
Priority date	Mar 21, 2014
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

First claim

What is claimed is:

1. A method of manufacturing an oxide semiconductor comprising:
forming an insulation layer on a substrate;
plasma treating a surface of the insulation layer, the plasma treating comprises:
heating the insulation layer using a heater in contact with the substrate; and
generating a plasma on the insulation layer after heating the insulation layer; and

forming an active pattern comprising an oxide semiconductor on the insulation layer which is plasma treated,
wherein in the plasma treating, the substrate is plasma treated using an oxide semiconductor deposition apparatus including a chamber body and a gas outlet disposed in the chamber body and which outputs gas for the plasma treating, the substrate is plasma treated in a first portion of the chamber body relative to the gas outlet before forming the active pattern, and the substrate passes through a second portion of the chamber body different from the first portion relative to the gas outlet after the forming the active pattern.

2. The method of claim 1 , wherein the plasma treating further comprises re-heating the insulation layer after the generating the plasma.

3. The method of claim 2 , wherein the heating the insulation layer of the plasma treating comprises:
first heating an entire portion of the substrate; and
second heating a central portion of the substrate except for a boundary of the substrate.

4. The method of claim 3 , wherein gas for the plasma treating is provided on the substrate in the second heating and in the generating the plasma.

5. The method of claim 2 , wherein the plasma treating further comprises cooling the substrate after the re-heating the substrate.

6. The method of claim 1 , wherein the forming the active pattern comprises:
forming a bottom layer on the insulation layer;
forming a bulk layer on the bottom layer; and
forming a surface layer on the bulk layer.

7. The method of claim 1 , wherein in the plasma treating,
the oxide semiconductor deposition apparatus includes a heater disposed in the chamber body which selectively heats different portions of the substrate via conductive heating and a cathode plate to which a high frequency voltage is applied while the heater is grounded.

8. The method of claim 7 , wherein the cathode plate of the oxide semiconductor depositing apparatus comprises one or more of aluminum, titanium and an alloy thereof.

Assignees

• Samsung Display Co Ltd

Inventors

• Kishimoto Katsushi
• Moon Yeon-Keon
• Sohn Sang-Woo
• Fukasawa Takayuki
• Shin Sang-Won

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P72/3304

  characterised by movements or sequence of movements of transfer devices · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title