Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers

US9643926B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9643926-B2
Application numberUS-201615001774-A
CountryUS
Kind codeB2
Filing dateJan 20, 2016
Priority dateSep 29, 2011
Publication dateMay 9, 2017
Grant dateMay 9, 2017

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

First claim

Opening claim text (preview).

What is claimed is: 1. A structure having a carbon nanotube (CNT) layer, the structure comprising: a substrate having a first region arranged adjacent to and in contact with a second region, the first region comprising a metal oxide, the second region comprising a non-metal oxide, and the first region having a first isoelectric point that is greater than a second isoelectric point of the second region; a self-assembled monolayer arranged only on the first region, the self-assembled monolayer comprising a precursor molecule comprising a first functional group to anchor the precursor molecule to the substrate and a second functional group having a first ionic charge moiety on a surface of the self-assembled monolayer; and a CNT layer on the self-assembled monolayer, each CNT of the CNT layer comprising a second ionic charge moiety that bonds to the first ionic charge moiety; wherein the CNT layer has a density exceeding 1 CNT per square micron, and top surfaces of the second region of the substrate remaining exposed. 2. The structure of claim 1 , wherein the CNT layer has a density of bundled CNTs of less than 1 CNT bundle per square micron.

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Classifications

  • oriented at angles to substrates, e.g. perpendicular to substrates · CPC title

  • to which a second hetero atom is attached (nitro radicals C07D213/61) · CPC title

  • Electricity · mapped topic

  • Manufacture or treatment of nanostructures · CPC title

  • C07D213/79Primary

    Acids; Esters · CPC title

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What does patent US9643926B2 cover?
A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. …
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification C07D213/79. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 09 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).