Silicon nanocrystal light emitting diode and fabricating method thereof

Patent metadata

Field	Value
Publication number	US-9640736-B2
Application number	US-201615013803-A
Country	US
Kind code	B2
Filing date	Feb 2, 2016
Priority date	Feb 6, 2015
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

Disclosed is a silicon nano crystal light emitting diode, including: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film.

First claim

What is claimed is:

1. A silicon nano crystal light emitting diode, comprising:
a photoelectric conversion layer formed of a silicon nitride layer including a silicon nano crystal;
an electron injection layer formed on the photoelectric conversion layer; and
a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film,
wherein the hole injection layer is formed of a p-type nitride semiconductor thin film, and
wherein the nitride semiconductor thin film includes any one of GaN, AlN, InN, AlGaN, InGaN, InAlN, and InAlGaN.

2. The silicon nano crystal light emitting diode of claim 1 , wherein the electron injection layer is formed of an n-type silicon carbide thin film.

3. The silicon nano crystal light emitting diode of claim 2 , wherein the silicon carbide thin film includes SiC or SiCN.

4. The silicon nano crystal light emitting diode of claim 1 , further comprising:
a transparent electrode formed on the electron injection layer.

5. The silicon nano crystal light emitting diode of claim 1 , further comprising:
an upper electrode formed on the transparent electrode; and
a lower electrode formed under the hole injection layer.

6. A method of fabricating a silicon nano crystal light emitting diode, comprising:
forming a hole injection layer, which has a smaller refractive index than that of a silicon thin film, and has an energy band gap passing through visible rays;
forming a photoelectric conversion layer of a silicon nitride layer including a silicon nano crystal on the hole injection layer; and
forming an electron injection layer on the photoelectric conversion layer,
wherein the hole injection layer is formed of a p-type nitride semiconductor thin film, and
wherein the nitride semiconductor thin film includes any one of GaN, AlN, InN, AlGaN, InGaN, InAlN, and InAlGaN.

7. The method of claim 6 , wherein the hole injection layer is formed of a material having a higher energy band gap than that of the photoelectric conversion layer.

8. The method of claim 6 , wherein the forming of the photoelectric conversion layer includes forming the silicon nano crystal within the silicon nitride layer by using a plasma enhanced chemical vapor deposition method.

9. The method of claim 6 , wherein the electron injection layer is formed of an n-type silicon carbide thin film.

10. The method of claim 9 , wherein the silicon carbide thin film includes SiC or SiCN.

11. The method of claim 6 , further comprising:
forming a transparent layer on the electron injection layer.

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Huh Chul
• Kim Bong Kyu
• Ahn Chang Geun

Classifications

• H01L33/502 Primary

  Electricity · mapped topic

• H01L33/26

  Electricity · mapped topic

• H10H20/822

  Materials of the light-emitting regions · CPC title

• H10H20/8512 Primary

  Wavelength conversion materials · CPC title

• H10K50/115 Primary

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title