Surface light-emission element using zinc oxide substrate

Patent metadata

Field	Value
Publication number	US-9640720-B2
Application number	US-201514737627-A
Country	US
Kind code	B2
Filing date	Jun 12, 2015
Priority date	Dec 14, 2012
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.

First claim

The invention claimed is:

1. A surface light-emitting device comprising:
a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape;
a light emitting functional layer provided on the substrate; and
an electrode provided on the light emitting functional layer;
wherein zinc oxide single crystal grains constituting the oriented polycrystalline zinc oxide sintered body have an average grain diameter of 1 to 100 μm, and
wherein the oriented polycrystalline zinc oxide sintered body has an orientation in the (002) plane, (110) plane, or (101) plane.

2. The surface light-emitting device according to claim 1 , wherein the light emitting functional layer has a structure epitaxially grown in conformity with an orientation of the oriented polycrystalline zinc oxide sintered body, and thereby has a crystal orientation aligned in a normal direction.

3. The surface light-emitting device according to claim 1 , further comprising a buffer layer between the light emitting functional layer and the substrate.

4. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body has a degree of orientation of 50% or greater to 100% or less.

5. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body has a degree of orientation of 65% or greater to 100% or less.

6. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body has a degree of orientation of 75% or greater to 100% or less.

7. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body is doped with an n-type dopant.

8. The surface light-emitting device according to claim 7 , wherein the n-type dopant comprises one or more selected from the group consisting of aluminum (Al), gallium (Ga), indium (In), boron (B), fluorine (F), chlorine (Cl), bromine (Br), iodine (I), and silicon (Si).

9. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body is doped with a p-type dopant.

10. The surface light-emitting device according to claim 9 , wherein the p-type dopant comprises one or more selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), carbon (C), lithium (Li), sodium (Na), potassium (K), silver (Ag), and copper (Cu).

11. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body has a resistivity of 8×10 −4 Ωcm or greater to 1×10 −2 Ωcm or less.

12. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body has a resistivity of 8×10 −4 Ωcm or greater to 1×10 −3 Ωcm or less.

13. The surface light-emitting device according to claim 1 , wherein the light emitting functional layer has a light emitting function based on a p-n junction.

14. The surface light-emitting device according to claim 1 , wherein the light emitting functional layer is composed of at least one selected from zinc oxide-based materials, gallium nitride-based materials, aluminum nitride-based materials, copper oxide-based materials, nickel oxide-based materials, zinc telluride-based materials, and zinc sulfide-based materials.

15. The surface light-emitting device according to claim 1 , wherein the substrate has an area of 25 cm 2 or greater to 400 cm 2 or less.

16. The surface light-emitting device according to claim 1 , wherein the oriented polycrystalline zinc oxide sintered body has a resistivity of 8×10 −4 Ωcm or greater to 1×10 −1 Ωcm or less.

Assignees

• Ngk Insulators Ltd

Inventors

• Watanabe Morimichi
• Imai Katsuhiro
• Yoshikawa Jun
• Nanataki Tsutomu
• Yoshino Takashi
• Takeuchi Yukihisa

Classifications

• H01L33/0008

  Electricity · mapped topic

• H01L33/325

  Electricity · mapped topic

• H01L33/28

  Electricity · mapped topic

• H01L33/0095

  Electricity · mapped topic

• H01L33/16 Primary

  Electricity · mapped topic