Interdigitated back contact heterojunction photovoltaic device

Patent metadata

Field	Value
Publication number	US-9640699-B2
Application number	US-201313763219-A
Country	US
Kind code	B2
Filing date	Feb 8, 2013
Priority date	Feb 8, 2013
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having a same dopant conductivity as the substrate. Methods are also disclosed.

First claim

What is claimed is:

1. A photovoltaic device, comprising:
a crystalline substrate having a first dopant conductivity;

an interdigitated back contact, wherein the interdigitated back contact includes back surface field stacks and emitter stacks, and wherein the back surface field stacks and the emitter stacks alternate, and either at least one of the back surface field stacks or at least one of the emitter stacks includes:
an n-doped noncrystalline layer directly on a crystalline n-doped layer, where the crystalline n-doped layer is in direct physical contact with the substrate, and a first transparent electrode is on the n-doped noncrystalline layer;
and the other of the at least one back surface field stack or the at least one emitter stack includes:
a p-doped noncrystalline layer directly on an intrinsic noncrystalline layer, where the intrinsic noncrystalline layer is in direct physical contact with the substrate, and a second transparent electrode spaced apart from the first transparent electrode is on the p-doped noncrystalline layer; and
a front surface field structure comprising a crystalline layer on the substrate a noncrystalline layer on the crystalline layer, the crystalline layer and the noncrystalline layer being doped with dopants having a same dopant conductivity as the substrate.

2. The device as recited in claim 1 , wherein the crystalline substrate includes silicon, and the crystalline layer and the noncrystalline layer include hydrogenated silicon having 5-40 atomic percent hydrogen.

3. The device as recited in claim 1 , wherein the crystalline layer includes an active doping level higher than an active doping density of the substrate.

4. The device as recited in claim 1 , wherein the crystalline layer includes thickness less than a diffusion length of minority carriers in the crystalline layer.

5. A photovoltaic device, comprising:
a Si-containing crystalline substrate having a first dopant conductivity;

an interdigitated back contact having back surface field stacks and emitter stacks, wherein the back surface field stacks and the emitter stacks alternate, and either at least one of the back surface field stacks or the emitter stacks includes:
an n-doped noncrystalline layer directly on a crystalline n-doped layer, where the crystalline n-doped layer is in direct physical contact with the substrate, and a first transparent electrode is on the n-doped noncrystalline layer;
and the other of the back surface field stacks and the emitter stacks includes:
a p-doped noncrystalline layer directly on an intrinsic noncrystalline layer, where the intrinsic noncrystalline layer is in direct physical contact with the substrate, and a second transparent electrode spaced apart from the first transparent electrode is on the p-doped noncrystalline layer; and
a front surface field structure comprising a hydrogenated Si-containing crystalline layer on the substrate and a hydrogenated Si-containing noncrystalline layer on the crystalline layer, the crystalline layer and the noncrystalline layer being doped with dopants having a same dopant conductivity as that of the substrate, the crystalline layer having a thickness less than a diffusion length of minority carriers in the crystalline layer.

6. The device as recited in claim 5 , wherein the hydrogenated silicon includes 5-40 atomic percent hydrogen.

7. The device as recited in claim 5 , wherein the crystalline layer includes an active doping level higher than an active doping density of the substrate.

Assignees

• IBM

Inventors

• Chen Tze-Chiang
• Hekmatshoartabari Bahman
• Sadana Devendra K
• Shahrjerdi Davood

Classifications

• H01L31/182

  Electricity · mapped topic

• H01L31/02167

  Electricity · mapped topic

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/077 Primary

  Electricity · mapped topic

• H01L31/022441

  Electricity · mapped topic