Three-dimensional conductive electrode for solar cell

Patent metadata

Field	Value
Publication number	US-2016204286-A1
Application number	US-201615077069-A
Country	US
Kind code	A1
Filing date	Mar 22, 2016
Priority date	Jun 30, 2011
Publication date	Jul 14, 2016
Grant date	—

Abstract

A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

First claim

What is claimed is:

1 . A method for forming a photovoltaic device, comprising:
forming a first electrode layer on cone shaped pillar structures, wherein the first electrode layer conforms with a apex at the upper surface of the cone shaped pillar structures; forming a photovoltaic stack that conforms with the apex at the upper surface of the cone shaped pillar structures; depositing a second electrode layer over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures, wherein the second electrode layer does not conform with the apex at the upper surface of the cone shaped pillar to provide a second electrode having a planar upper surface; and etching the second electrode layer to open up the gaps or fissures to form an electrode of substantially uniform thickness over the photovoltaic stack, wherein the etching of the second electrode layer removes a portion of at least the planar upper surface to conform the second electrode layer to an entire surface of the continuous photovoltaic stack.

2 . The method as recited in claim 1 , wherein the second electrode layer includes a transparent conductive oxide and the step of depositing includes depositing the second electrode layer by sputtering.

3 . The method as recited in claim 2 , wherein the transparent conductive oxide includes ZnO.

4 . The method as recited in claim 1 , wherein the substrate includes glass.

5 . The method as recited in claim 1 , wherein etching includes employing hydrochloric acid.

6 . The method as recited in claim 1 , wherein depositing includes depositing the second electrode layer to a thickness of about 2 microns.

7 . The method of claim 1 , wherein the photovoltaic stack is a p-i-n diode stack.

8 . The method of claim 1 , wherein the first electrode comprises ZnO.

9 . The method of claim 7 , wherein the p-i-n stack is formed using PECVD.

10 . The method of claim 7 , wherein the p-i-n stack comprises a P-type layer comprised of polycrystalline or microcrystalline silicon.

11 . The method of claim 7 , wherein the p-i-n stack comprises an N-type layer of polycrystalline or microcrystalline silicon.

12 . The method of claim 7 , wherein the p-i-n stack comprises an i-type layer of undoped amorphous silicon.

13 . The method of claim 1 , wherein the cone shaped pillar structures have a height greater than 1 micron.

Assignees

• IBM

Inventors

• Fogel Keith E
• Hong Augustin J
• Kim Jeehwan
• Sadana Devendra K

Classifications

• H10F77/1662

  including only Group IV materials · CPC title

• H10F77/703

  of the semiconductor bodies, e.g. textured active layers · CPC title

• H10F77/251

  comprising zinc oxide [ZnO] · CPC title

• H10F77/148

  Shapes of potential barriers · CPC title

• H10F77/147

  Shapes of bodies · CPC title