Method for producing the P-N junction of a thin-film photovoltaic cell and corresponding method for producing a photovoltaic cell

Patent metadata

Field	Value
Publication number	US-9640687-B2
Application number	US-201414892462-A
Country	US
Kind code	B2
Filing date	May 23, 2014
Priority date	May 24, 2013
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

First claim

The invention claimed is:

1. A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are successively carried out: a layer of precursors of a photovoltaic material of type P or N, a barrier layer, and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by a single annealing step carried out with a supply of S or Se or both S and Se, this annealing step leading to the formation of an absorbing layer of type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said absorbing and buffer layers, said annealing step allowing transformation of said precursors of a semiconductor material of type N or P into a material forming said buffer layer, the barrier layer preventing chemical diffusion and oxidation at the interface between the absorbing layer and the buffer layer during this annealing step.

2. The method according to claim 1 , wherein the precursors of a photovoltaic material of type N or P comprise metal precursors of Cu, Zn, Sn or of Cu, Ga and In.

3. The method according to claim 1 , wherein a layer of Se or S or both S and Se is deposited on the layer of precursors of a photovoltaic material of type P or N, before depositing the barrier layer.

4. The method according to claim 1 , wherein the precursors of a photovoltaic material also comprise selenium or sulfur compounds or compounds of both selenium and sulfur of metal precursors.

5. The method according to claim 1 , wherein the precursor of a semiconducting material of type N or P is indium.

6. The method according to claim 1 , wherein, during the annealing step, the sulfur and selenium are provided in gaseous form.

7. The method according to claim 1 , wherein that the annealing step is carried out at a temperature comprised between 400° and 650° C., with temperature raising ramps comprised between 1° C./s and 15° C./s.

8. The method according to claim 1 , wherein the barrier layer is formed with a nitride or an oxide.

9. A method for producing a thin film photovoltaic cell comprising:
producing a rear-face electrode on a substrate;
applying the method according to claim 1 ; and
producing a transparent and conductive front-face electrode.

10. The method according to claim 9 , wherein the rear-face electrode is a molybdenum layer, while the front-face electrode is a ZnO layer doped with Al.

11. The method according to claim 9 , wherein an intrinsic ZnO layer is deposited after applying the method for producing the P-N junction and before producing the front-face electrode.

Assignees

• Commissariat Energie Atomique

Inventors

• Altamura Giovanni
• Grenet Louis
• Perraud Simon
• Roux Frédéric

Classifications

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H01L31/072

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• H01L31/022483

  Electricity · mapped topic

• H01L31/03923 Primary

  Electricity · mapped topic