Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
Photoelectronically active, chalcogen-based thin film structures incorporating tie layers
US8969720B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969720-B2 |
| Application number | US-201113047139-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 14, 2011 |
| Priority date | Mar 17, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-containing tie layers.
First claim
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What is claimed is: 1. A method of making a chalcogen-containing photoabsorbing structure, comprising the steps of: (a) forming a first film precursor capable of being converted into a first PACB film, the first film precursor comprising at least Cu, In, optionally at least one of Ga and Al, and at least one chalcogen, wherein at least a portion of said forming of the first film precursor occurs at a temperature of less than about 350° C. and wherein the first film precursor as de…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969720B2 cover?
- The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-c…
- Who is the assignee on this patent?
- Gerbi Jennifer E, Dow Global Technologies Llc
- What technology area does this patent fall under?
- Primary CPC classification H10F10/167. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).