Schottky contact

Patent metadata

Field	Value
Publication number	US-9640627-B2
Application number	US-201213414286-A
Country	US
Kind code	B2
Filing date	Mar 7, 2012
Priority date	Mar 7, 2012
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor body;
a Schottky contact comprising:
a Schottky layer comprising a first metal and formed on the semiconductor body;
a first diffusion barrier layer formed from a portion of the Schottky layer and comprising a silicide of the first metal and formed on at least a portion of the Schottky layer; and
a third layer comprising a second metal and formed on the first diffusion barrier layer,

wherein the first metal is nickel and the silicide is nickel silicide.

2. The semiconductor device of claim 1 wherein the second metal is one of gold and aluminum.

3. A semiconductor device comprising:
a semiconductor body;
a Schottky contact comprising:
a Schottky layer comprising a first metal and formed on the semiconductor body;
a first diffusion barrier layer formed from a portion of the Schottky layer and comprising a silicide of the first metal and formed on at least a portion of the Schottky layer; and
a third layer comprising a second metal and formed on the first diffusion barrier layer,

wherein the Schottky contact further comprises a titanium layer over the first diffusion barrier layer.

4. The semiconductor device of claim 3 wherein the Schottky contact further comprises a platinum layer over the titanium layer.

5. The semiconductor device of claim 4 wherein the third layer is formed over the platinum layer.

6. The semiconductor device of claim 5 wherein a protection layer formed of titanium is formed over the third layer.

7. The semiconductor device of claim 4 wherein the semiconductor body comprises a body layer formed of group-III nitride material and at least a portion of the Schottky contact is formed against a portion of the body layer.

8. A semiconductor device comprising:
a semiconductor body; and
a Schottky contact comprising:
a Schottky layer comprising nickel and formed on the semiconductor body; and
a first diffusion barrier layer formed from a portion of the Schottky layer and comprising nickel silicide and formed on at least a portion of the Schottky layer.

9. The semiconductor device of claim 8 further comprising a third layer comprising a second metal and formed on the first diffusion barrier layer.

10. The semiconductor device of claim 9 wherein the second metal is one of gold and aluminum.

11. The semiconductor device of claim 9 wherein the Schottky contact further comprises a titanium layer over the first diffusion barrier layer.

12. The semiconductor device of claim 11 wherein the Schottky contact further comprises a platinum layer over the titanium layer.

13. The semiconductor device of claim 12 wherein the third layer is formed over the platinum layer.

14. The semiconductor device of claim 13 wherein a protection layer formed of titanium is formed over the third layer.

15. The semiconductor device of claim 9 wherein the semiconductor body comprises a body layer formed of group-III nitride material and at least a portion of the Schottky contact is formed against a portion of the body layer.

Assignees

• Hagleitner Helmut
• Sriram Saptharishi
• Cree Inc

Inventors

• Hagleitner Helmut
• Sriram Saptharishi

Classifications

• H10D64/0124

  to Group III-V semiconductors · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H01L29/2003

  Electricity · mapped topic

• H01L21/28581

  Electricity · mapped topic

• H01L29/872

  Electricity · mapped topic