Semiconductor diodes, and variable resistance memory devices

Patent metadata

Field	Value
Publication number	US-9640586-B2
Application number	US-201514620944-A
Country	US
Kind code	B2
Filing date	Feb 12, 2015
Priority date	Jun 18, 2014
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A semiconductor diode includes a first semiconductor pattern including a first impurity, a first diffusion barrier pattern on the first semiconductor pattern, an intrinsic semiconductor pattern on the first diffusion barrier pattern, a second diffusion barrier pattern on the intrinsic semiconductor pattern, and a second semiconductor pattern including a second impurity on the second diffusion barrier pattern.

First claim

What is claimed is:

1. A variable resistance memory device, comprising:
a plurality of first conductive lines extending in a first direction;
a plurality of second conductive lines over the first conductive lines, the second conductive lines extending in a second direction crossing the first direction; and
a plurality of memory cells at intersection regions of the first conductive lines and the second conductive lines, each of the memory cells including,
a semiconductor diode including a first semiconductor pattern, a first diffusion barrier pattern, an intrinsic semiconductor pattern, a second diffusion barrier pattern and a second semiconductor pattern sequentially stacked on the first conductive lines, the first semiconductor pattern including a first impurity and the second semiconductor pattern including a second impurity; and
a variable resistance pattern on the semiconductor diode,

wherein the first diffusion barrier pattern and the second diffusion barrier pattern include at least one of polysilicon doped with carbon and silicon carbide, and
wherein the variable resistance pattern includes one of a perovskite-based material and a transition metal oxide.

2. The variable resistance memory device of claim 1 , further comprising:
a spacer surrounding a sidewall of the semiconductor diode.

3. The variable resistance memory device of claim 2 , wherein the spacer includes a carbon-containing insulation material.

4. The variable resistance memory device of claim 3 , wherein the spacer includes one of silicon carbooxide and silicon carbonitride.

5. The variable resistance memory device of claim 2 , wherein the spacer includes:
a first spacer on sidewalls of the memory cells and the first conductive lines; and
a second spacer on sidewalls of the memory cells and the second conductive lines.

6. The variable resistance memory device of claim 2 , further comprising:
an insulation layer pattern on the spacer and surrounding the memory cells,
wherein the insulation layer pattern defines an air gap between the memory cells neighboring each other.

7. The variable resistance memory device of claim 6 , wherein the air gap includes a first air gap extending in the first direction and a second air gap extending in the second direction.

8. A variable resistance memory device, comprising:
a plurality of first conductive lines extending in a first direction;
a plurality of second conductive lines over the first conductive lines, the second conductive lines extending in a second direction crossing the first direction; and
a plurality of memory cells at intersection regions of the first conductive lines and the second conductive lines, each of the memory cells including,
a semiconductor diode including a first semiconductor pattern, an intrinsic semiconductor pattern and a second semiconductor pattern sequentially stacked on the first conductive lines, and a plurality of dopant regions distributed throughout the first semiconductor pattern, the intrinsic semiconductor pattern and the second semiconductor pattern, the first semiconductor pattern including a first impurity and the second semiconductor pattern including a second impurity, the dopant regions including,
a first dopant region at a region adjacent to an interface of the first semiconductor pattern and the intrinsic semiconductor pattern, the first dopant region including carbon, and
a second dopant region at a region adjacent to an interface of the second semiconductor pattern and the intrinsic semiconductor pattern, the second dopant region including carbon, and

a variable resistance pattern on the semiconductor diode,

wherein the dopant regions are maximum dopant regions, the maximum dopant regions corresponding with maximum concentration peaks of a dopant in the semiconductor diode.

9. A semiconductor diode, comprising:
a first semiconductor pattern doped with a first type impurity and a second semiconductor pattern doped with a second type impurity different than the first type impurity;
an intrinsic semiconductor pattern between the first and second semiconductor patterns; and
carbon doped regions at an interface of the intrinsic semiconductor pattern and each of the first and second semiconductor patterns,
wherein a concentration of the carbon doped regions decreases as a distance from the interface of the intrinsic semiconductor pattern and each of the first and second semiconductor patterns increases.

10. The semiconductor diode of claim 9 , wherein the carbon doped regions include at least one of polysilicon doped with carbon, and silicon carbide.

11. The semiconductor diode of claim 9 , wherein the first type impurity includes an n-type impurity and the second type impurity includes a p-type impurity.

12. The semiconductor diode of claim 9 , wherein the carbon doped regions are maximum carbon doped regions, the maximum carbon doped regions corresponding with maximum concentration peaks of a dopant in he semiconductor diode.

Assignees

• Seong Dong-Jun
• Kang Youn-Seon
• Samsung Electronics Co Ltd

Inventors

• Seong Dong-Jun
• Kang Youn-Seon

Classifications

• H01L45/1683

  Electricity · mapped topic

• H01L45/06

  Electricity · mapped topic

• H01L45/04

  Electricity · mapped topic

• H01L45/148

  Electricity · mapped topic

• H01L45/1233

  Electricity · mapped topic