Metallized film capacitor

Patent metadata

Field	Value
Publication number	US-9640324-B2
Application number	US-201314402313-A
Country	US
Kind code	B2
Filing date	May 23, 2013
Priority date	Jun 1, 2012
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

A metallized film capacitor includes: a first dielectric film; a first metal deposition electrode provided to a first surface of the first dielectric film; a second dielectric film; and a second metal deposition electrode that is provided to a first surface of the second dielectric film and that faces the first dielectric film. The metallized film capacitor further includes: a low resistance provided above at least one of a first end of the first metal deposition electrode and a first end of the second metal deposition electrode; and a first film that covers at least a portion of the low resistance and that comprises mainly aluminum oxide.

First claim

The invention claimed is:

1. A metallized film capacitor comprising:
a first dielectric film;
a first metal deposition electrode provided to a first surface of the first dielectric film;
a second dielectric film;
a second metal deposition electrode provided to a first surface of the second dielectric film, and facing the first dielectric film;
a low resistance portion provided on at least one of a first end of the first metal deposition electrode and a first end of the second metal deposition electrode;
a first metallikon electrode connected to the first end of the first metal deposition electrode;
a second metallikon electrode connected to the first end of the second metal deposition electrode; and
a first film formed only on a surface of the low resistance portion, covering at least a portion of the low resistance portion, and comprising mainly aluminum oxide that is an insulator.

2. The metallized film capacitor according to claim 1 , further comprising:
a second film comprising a substance having reactivity to water, the reactivity being higher than reactivity of aluminum to water,
wherein the second film covers at least a portion of the first film.

3. The metallized film capacitor according to claim 1 , further comprising:
a second film comprising mainly magnesium oxide,
wherein the second film covers at least a portion of the first film.

4. The metallized film capacitor according to claim 1 ,
wherein the first film further comprises aluminum, and
a depth, at which an intensity ratio of binding energy of the aluminum oxide to the aluminum in the first film is smaller than 1, is greater than 0 nm and at most 25 nm.

5. The metallized film capacitor according to claim 1 , wherein at least one of the first metal deposition electrode and the second metal deposition electrode comprises an alloy of aluminum and magnesium.

6. The metallized film capacitor according to claim 1 , wherein the low resistance portion comprises zinc.

7. A metallized film capacitor comprising:
a first dielectric film;
a first metal deposition electrode provided to a first surface of the first dielectric film;
a second metal deposition electrode provided to a second surface of the first dielectric film, the second surface being on a reverse side of the first surface;
a low resistance portion provided on at least one of a first end of the first metal deposition electrode and a first end of the second metal deposition electrode;
a first metallikon electrode connected to the first end of the first metal deposition electrode;
a second metallikon electrode connected to the first end of the second metal deposition electrode; and
a first film formed only on a surface of the low resistance portion, covering at least a portion of the low resistance portion, and comprising mainly aluminum oxide that is an insulator.

8. The metallized film capacitor according to claim 7 , further comprising:
a second film comprising a substance having reactivity to water, the reactivity being higher than reactivity of aluminum to water,
wherein the second film covers at least a portion of the first film.

9. The metallized film capacitor according to claim 7 , further comprising:
a second film comprising mainly magnesium oxide,
wherein the second film covers at least a portion of the first film.

10. The metallized film capacitor according to claim 7 ,
wherein the first film further comprises aluminum, and
a depth, at which an intensity ratio of binding energy of the aluminum oxide to the aluminum in the first film is smaller than 1, is greater than 0 nm and at most 25 nm.

11. The metallized film capacitor according to claim 7 , wherein at least one of the first metal deposition electrode and the second metal deposition electrode comprises an alloy of aluminum and magnesium.

12. The metallized film capacitor according to claim 7 , wherein the low resistance portion comprises zinc.

13. A metallized film capacitor comprising:
a first dielectric film;
a first metal deposition electrode provided to a first surface of the first dielectric film;
a second dielectric film;
a second metal deposition electrode provided to a first surface of the second dielectric film, and facing the first dielectric film;
a low resistance portion provided on at least one of a first end of the first metal deposition electrode and a first end of the second metal deposition electrode;
a first metallikon electrode connected to the first end of the first metal deposition electrode;
a second metallikon electrode connected to the first end of the second metal deposition electrode;
a first film covering at least a portion of the low resistance portion, and comprising mainly aluminum oxide; and
a second film comprising a substance having reactivity to water, the reactivity being higher than reactivity of aluminum to water,
wherein the second film covers at least a portion of the first film.

14. The metallized film capacitor according to claim 13 , wherein the second film comprises mainly magnesium oxide.

15. A metallized film capacitor comprising:
a first dielectric film;
a first metal deposition electrode provided to a first surface of the first dielectric film;
a second metal deposition electrode provided to a second surface of the first dielectric film, the second surface being on a reverse side of the first surface;
a low resistance portion provided on at least one of a first end of the first metal deposition electrode and a first end of the second metal deposition electrode;
a first metallikon electrode connected to the first end of the first metal deposition electrode;
a second metallikon electrode connected to the first end of the second metal deposition electrode;
a first film covering at least a portion of the low resistance portion, and comprising mainly aluminum oxide; and
a second film comprising a substance having reactivity to water, the reactivity being higher than reactivity of aluminum to water,
wherein the second film covers at least a portion of the first film.

16. The metallized film capacitor according to claim 15 , wherein the second film comprising mainly magnesium oxide.

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Takeoka Hiroki
• Nakatsubo Kazuhiro
• Kubota Hiroshi

Classifications

• H01G4/015

  Special provisions for self-healing · CPC title

• H01G4/32 Primary

  Wound capacitors · CPC title

• Y02T10/7022

  Cross-Sectional Technologies · mapped topic

• H01G4/18

  of synthetic material, e.g. derivatives of cellulose (H01G4/16 takes precedence) · CPC title

• H01G4/012

  Form of non-self-supporting electrodes · CPC title