Determining thermal profiles of semiconductor structures

Patent metadata

Field	Value
Publication number	US-9638581-B2
Application number	US-201414302934-A
Country	US
Kind code	B2
Filing date	Jun 12, 2014
Priority date	Jun 12, 2014
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.

First claim

What is claimed is:

1. A method using an emitting layer on at a surface of a semiconductor structure, the method comprising:
performing a reflow process that heats the semiconductor structure according to a temperature profile to cause a controlled collapse chip connection to transform from a solid state to a liquid state;
during the reflow process, sensing, by one or more computer processors, emission from the emitting layer for a first predetermined time period;
determining, by one or more computer processors, a first luminescent intensity value of the emitting layer over the first predetermined time period;
during the reflow process, sensing, by one or more computer processors, emission from the emitting layer for a second predetermined time period;
determining, by one or more computer processors, a second luminescent intensity value of the emitting layer over a second predetermined time; and
determining, by one or more computer processors, a thermal profile of the surface of the semiconductor structure utilizing the first luminescent intensity value of the emitting layer and the second luminescent intensity value of the emitting layer.

2. The method of claim 1 , wherein the emitting layer emits one or more of luminescence, visible light, infrared light, and ions.

3. The method of claim 1 , wherein the emitting layer is capable of one or more of chemiluminescence, bioluminescence, and photoluminescence.

4. The method of claim 1 , wherein the emitting layer includes a quantum dot capable of a temperature-based spectral shift.

5. The method of claim 1 , wherein the emitting layer includes an alkaline earth aluminate.

Assignees

• Globalfoundries Inc

Inventors

• Clore Nicholas G
• Lyons Kendra A
• Norfleet Andrew H
• Yanofsky Jared P

Classifications

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• G01J5/0878 Primary

  Diffusers · CPC title

• G01J2005/283

  Array · CPC title