Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition
US-2015368282-A1 · Dec 24, 2015 · US
Fluorine free tungsten ALD/CVD process
US9637395B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9637395-B2 |
| Application number | US-201314431116-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2013 |
| Priority date | Sep 28, 2012 |
| Publication date | May 2, 2017 |
| Grant date | May 2, 2017 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a tungsten or a tungsten-containing film on a substrate comprising: providing a tungsten precursor, volatilizing the tungsten precursor to form a tungsten precursor vapor, and contacting the tungsten precursor vapor with a substrate under vapor deposition conditions to form the tungsten or tungsten-containing film on the substrate, wherein the tungsten precursor comprises a tungsten precursor of the formula 2. The method of claim 1 , wherein the tungsten precursor further comprises WCl 6 or WCl 4 . 3. The method of claim 1 , wherein the tungsten precursor is provided in a solid form. 4. The method of claim 3 , wherein the tungsten precursor is in particulate form. 5. The method of claim 3 , wherein the tungsten precursor is coated on an interior surface in the vessel. 6. The method of claim 1 , wherein the tungsten precursor is provided in a solvent medium. 7. The method of claim 6 , wherein the tungsten precursor is provided in a solution. 8. The method of claim 6 , wherein the tungsten precursor is provided in a suspension. 9. The method of claim 1 , wherein the substrate comprises a glue layer of a material compatible with the tungsten or tungsten-containing film.
Assignees
Inventors
Classifications
mainly consisting of metals or alloys · CPC title
- C23C16/18Primary
from metallo-organic compounds · CPC title
from metal carbonyl compounds · CPC title
- C01G41/006Primary
Compounds containing tungsten, with or without oxygen or hydrogen, and containing two or more other elements · CPC title
Complex cyanides · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9637395B2 cover?
- A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tu…
- Who is the assignee on this patent?
- Entegris Inc
- What technology area does this patent fall under?
- Primary CPC classification C23C16/18. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 02 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).