Cup-like getter scheme

Patent metadata

Field	Value
Publication number	US-9637378-B2
Application number	US-201314023572-A
Country	US
Kind code	B2
Filing date	Sep 11, 2013
Priority date	Sep 11, 2013
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

First claim

What is claimed is:

1. A MEMs (microelectromechanical system) structure, comprising:
a substrate comprising a first cavity having a bottom surface and sidewalls extending from the bottom surface to an upper surface of the substrate;
one or more bonding structures disposed onto the upper surface of the substrate at locations set back from the first cavity;
a first getter layer disposed onto the substrate at a position extending from the bottom surface to a location overlying the upper surface of the substrate; and
a device wafer comprising a MEMs device affixed to the substrate by the one or more bonding structures, wherein the device wafer comprises a second cavity separated from the first cavity by a MEMs substrate,
a second getter layer disposed onto sidewalls and a horizontal surface of the second cavity.

2. The MEMs structure of claim 1 , wherein the first getter layer contacts the bonding structures and has an upper surface that is below an upper surface of the one or more bonding structures.

3. The MEMs structure of claim 1 , wherein the first and second getter layers comprise barium (Ba), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), iron (Fe), cobalt (Co), aluminum (Al), or silicon (Si).

4. The MEMs structure of claim 1 ,
wherein an opening extends through the first getter layer to expose a bottom surface of the first cavity; and
wherein the opening is arranged between horizontal segments of the first getter layer disposed along the bottom surface of the first cavity.

5. A MEMs (microelectromechanical system) structure, comprising:
a substrate comprising a cavity having a bottom surface and sidewalls extending from the bottom surface to an upper surface of the substrate;
one or more bonding structures disposed onto the upper surface of the substrate at locations set back from the cavity; and
a getter layer disposed onto the substrate at a position extending from the bottom surface to a location overlying the upper surface of the substrate, wherein the getter layer contacts the one or more bonding structures and has an upper surface that is below an upper surface of the one or more bonding structures.

6. The MEMs structure of claim 5 , further comprising:
a device wafer comprising a MEMs device affixed to the substrate by the one or more bonding structures; and
wherein the device wafer comprises a second cavity separated from the cavity by a MEMs substrate; and
wherein an additional getter layer is located along sidewalls and a horizontal surface of the second cavity.

7. The MEMs structure of claim 5 , wherein the getter layer comprises barium (Ba), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), iron (Fe), cobalt (Co), aluminum (Al), or silicon (Si).

8. The MEMs structure of claim 5 , wherein the getter layer has a greater thickness along a sidewall of the one or more bonding structures than laterally between the one or more bonding structures and the cavity.

9. The MEMs structure of claim 5 , wherein an opening extends through the getter layer to expose the bottom surface of the cavity.

10. The MEMs structure of claim 9 , wherein the opening is arranged between horizontal segments of the getter layer disposed along the bottom surface of the cavity.

11. A MEMs (microelectromechanical system) structure, comprising:
a substrate comprising a cavity disposed between bonding areas on a top surface of the substrate, wherein the cavity comprises a bottom surface and sidewalls extending from the bottom surface to the top surface of the substrate;
a bonding layer disposed within the bonding areas;
a getter layer disposed onto the substrate at a position extending from the bottom surface to a location overlying the top surface of the substrate, wherein the getter layer is arranged along opposing sidewalls of the bonding layer; and
wherein an opening extends through the getter layer to expose the bottom surface of the cavity and wherein the opening is arranged between horizontal segments of the getter layer disposed along the bottom surface of the cavity.

12. The MEMs structure of claim 11 , wherein the getter layer comprises barium (Ba), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), iron (Fe), cobalt (Co), aluminum (Al), or silicon (Si).

13. The MEMs structure of claim 11 , wherein the getter layer contacts the opposing sidewalls of the bonding layer.

14. The MEMs structure of claim 11 , wherein the getter layer has a greater thickness along a sidewall of the bonding layer than laterally between the bonding layer and the cavity.

15. The MEMs structure of claim 11 , wherein the getter layer has an upper surface that is below an upper surface of the bonding layer.

16. The MEMs structure of claim 11 , wherein the substrate comprises silicon.

17. The MEMs structure of claim 11 , wherein the getter layer is arranged along a first sidewall of the bonding layer facing away from the cavity and along a second sidewall of the bonding layer facing the cavity.

18. The MEMs structure of claim 11 , further comprising:
a device wafer comprising a MEMs (microelectromechanical system) device affixed to the substrate at an interface comprising the bonding layer,
wherein a hermetically sealed chamber abutting the MEMs device is disposed between the substrate and device wafer.

19. The MEMs structure of claim 18 , wherein the device wafer comprises an ASIC wafer connected to an inter-metal dielectric layer comprising one or more metal interconnect layers.

20. The MEMs structure of claim 18 , wherein the device wafer comprises a second cavity separated from the cavity by a MEMs substrate, wherein an additional getter layer is located along sidewalls and a horizontal surface of the second cavity.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chan Chih-Jen
• Tseng Lee-Chuan
• Lin Shih-Wei
• Chang Che-Ming
• Chou Chung-Yen
• Hsieh Yuan-Chih

Classifications

• H10W76/48

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• B81C2203/0118

  Bonding a wafer on the substrate, i.e. where the cap consists of another wafer · CPC title

• B81B2207/015

  the micromechanical device and the control or processing electronics being integrated on the same substrate · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• B81B2201/0242

  Gyroscopes · CPC title