Film stack including adhesive layer

Patent metadata

Field	Value
Publication number	US-9636902-B2
Application number	US-201313873932-A
Country	US
Kind code	B2
Filing date	Apr 30, 2013
Priority date	Apr 30, 2013
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

An example provides an apparatus including a substrate, a metal layer, and an adhesive layer adhered between the substrate and the metal layer, the adhesive layer comprising indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide.

First claim

What is claimed is:

1. An apparatus comprising:
a substrate;
a metal layer;
an adhesive layer adhering the substrate and the metal layer, wherein the adhesive layer comprises an indium-tin oxide having an In:Sn atomic ratio of 9:1, wherein a first surface of the adhesive layer is in direct contact with a surface of the metal layer and a second surface of the adhesive layer is in direct contact with a surface of the substrate; and
a piezoelectric layer, wherein the piezoelectric layer is directly disposed on the metal layer such that the metal layer is between the adhesive layer and the piezoelectric layer.

2. The apparatus of claim 1 , wherein the adhesive layer has a thickness of less than 1,000 nm.

3. The apparatus of claim 2 , wherein the thickness of the adhesive layer is in a range of about 20 nm to about 500 nm.

4. The apparatus of claim 1 , wherein the metal layer is a first electrode, and wherein the apparatus further comprises a second electrode on the piezoelectric layer such that the piezoelectric layer is between the first electrode and the second electrode.

5. The apparatus of claim 1 , wherein the piezoelectric layer is PZT.

6. The apparatus of claim 1 , wherein the substrate, the metal layer, and the adhesive layer form, at least in part, a printhead.

7. The apparatus of claim 1 , wherein the apparatus is an actuator or a sensor.

8. The apparatus of claim 1 , wherein the substrate comprises a membrane having a thickness in a range of about 1 nm to about 10,000 nm, and wherein the membrane comprises a material selected from a group consisting of silicon, nitrides, carbides, oxides, and metals.

9. The apparatus of claim 1 , wherein the metal layer is an electrode having a thickness in a range of about 5 nm to about 5,000 nm, and wherein the electrode comprises a metal oxide or a metal selected from a group consisting of platinum, silver, copper, gold, ruthenium, iridium, nickel, molybdenum, rhodium, palladium, and alloys thereof, or a combination thereof.

10. An apparatus comprising:
a substrate;
a metal layer;
an adhesive layer adhering the substrate and the metal layer, wherein the adhesive layer comprises indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide, wherein a first surface of the adhesive layer is in direct contact with a surface of the metal layer and a second surface of the adhesive layer is in direct contact with a surface of the substrate; and
a piezoelectric layer directly disposed on the metal layer, such that the metal layer is between the adhesive layer and the piezoelectric layer.

11. A film stack comprising:
a substrate;
a metal layer;
an adhesive layer adhering the substrate and the metal layer, wherein the adhesive layer comprises indium oxide, tin oxide, gallium oxide, indium-tin oxide, indium-gallium oxide, tin-gallium oxide, or indium-tin-gallium oxide, wherein a first surface of the adhesive layer is in direct contact with a surface of the metal layer and a second surface of the adhesive layer is in direct contact with a surface of the substrate; and
a piezoelectric layer, wherein the piezoelectric layer is directly disposed on the metal layer such that the metal layer is between the adhesive layer and the piezoelectric layer.

12. The film stack of claim 11 , wherein the metal layer is a first electrode, and the film stack comprises a second electrode on the piezoelectric layer such that the piezoelectric layer is between the first electrode and the second electrode.

13. The film stack of claim 11 , wherein the adhesive layer comprises indium-tin oxide having an In:Sn atomic ratio of about 9:1.

Assignees

• Hewlett Packard Development Co Lp
• Hewlett Packard Development Co Lp

Inventors

• Abbott Jr James Elmer
• Mardilovich Peter
• Hoffman Randy

Classifications

• B32B2038/0092

  Metallizing · CPC title

• B32B38/08 Primary

  Impregnating · CPC title

• Y10T428/266

  of base or substrate · CPC title

• H01L41/0973

  Electricity · mapped topic

• B41J2/14233

  of film type, deformed by bending and disposed on a diaphragm · CPC title