Optical design for line generation using microlens array

US9636778B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9636778-B2
Application numberUS-201514610893-A
CountryUS
Kind codeB2
Filing dateJan 30, 2015
Priority dateNov 4, 2011
Publication dateMay 2, 2017
Grant dateMay 2, 2017

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  1. Title

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  5. First independent claim

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Abstract

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Embodiments of the present disclosure relate to an apparatus for thermally processing a semiconductor substrate. In one embodiment, the apparatus includes a substrate support, a beam source having a fast axis for emitting a beam along an optical path intersecting the substrate support, and a homogenizer disposed along the optical path between the beam source and the substrate support. The homogenizer comprises a first lens array, and a second lens array, wherein lenses of the second lens array have a larger lenslet array spacing than lenses of the first lens array.

First claim

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The invention claimed is: 1. A thermal processing apparatus for processing a semiconductor substrate, comprising: a substrate support having a substrate receiving surface; a beam source having a fast axis for emitting a beam along an optical path intersecting the substrate receiving surface of the substrate support; and a homogenizer disposed along the optical path between the beam source and the substrate support, the homogenizer comprising: a first lens array having a lenslet array of cylindrical lenses; and a second lens array having a lenslet array of cylindrical lenses, wherein at least two adjacent cylindrical lenses of the lenslet array of the second lens array have a larger pitch than a pitch of at least two adjacent cylindrical lenses of the lenslet array of the first lens array. 2. The apparatus of claim 1 , further comprising: a plurality of condensing lenses disposed between the homogenizer and the substrate support along the optical path, wherein the plurality of condensing lenses comprises at least five spherical lenses. 3. The apparatus of claim 1 , wherein each cylindrical lens of the lenslet array of the second lens array and each cylindrical lens of the lenslet array of the first lens array is oriented along an axis that is parallel to the fast axis. 4. The apparatus of claim 1 , wherein the beam source emits a beam at a wavelength between about 190 nm and about 950 nm. 5. A thermal processing apparatus for processing a semiconductor substrate, comprising: a substrate support having a substrate receiving surface; an array of laser diode bars emitting laser radiation at a first wavelength along an optical path intersecting the substrate receiving surface of the substrate support, the array of laser diode bars being arranged in plural parallel rows extending along a slow axis, the rows of laser diode bars being arranged in a stack along a fast axis, wherein the slow axis and the fast axis are orthogonal to the optical path between the array of laser diode bars and the substrate support; an illumination optics disposed along the optical path between the array of laser diode bars and the substrate support, the illumination optics comprising: a set of slow-axis lenses having at least a first cylindrical lens and a second cylindrical lens spaced apart from each other; and a set of fast-axis lenses having at least a first cylindrical lens and a second cylindrical lens spaced apart from each other, the set of fast-axis lenses being disposed between the first cylindrical lens and second cylindrical lens of the set of slow-axis lenses; and a homogenizer disposed between the illumination optics and the substrate support along the optical path for homogenizing laser radiation along the slow axis, the homogenizer comprising: a first lens array having a lenslet array of cylindrical lenses; and a second lens array having a lenslet array of cylindrical lenses, wherein at least two adjacent cylindrical lenses of the lenslet array of the second lens array have a larger pitch than a pitch of at least two adjacent cylindrical lenses of the lenslet array of the first lens array. 6. The apparatus of claim 5 , wherein the illumination optics further comprises: a dichroic mirror disposed downstream of the set of fast-axis lenses and configured to redirect laser radiation of a second and a third wavelengths reflected from the heated substrate to a pyrometer; and a waveplate disposed downstream of the dichroic mirror to transform the linear polarization of laser radiation into circular polarization. 7. The apparatus of claim 5 , further comprising: a condensing lens set disposed between the homogenizer and the substrate support along the optical path for focusing a line image at a surface of the substrate. 8. The apparatus of claim 7 , wherein the condensing lens set comprises at least five spherical lenses. 9. The apparatus of claim 5 , wherein the first cylindrical lens of the set of slow-axis lenses has a convex lens surface facing toward the array of laser diode bars and the second cylindrical lens of the set of slow-axis lenses has a convex lens surface facing toward the surface of the substrate. 10. The apparatus of claim 5 , wherein the first cylindrical lens of the set of fast-axis lenses has a concave lens surface facing toward the array of laser diode bars and the second cylindrical lens of the set of fast-axis lenses has a convex lens surface facing toward the surface of the substrate. 11. The apparatus of claim 5 , wherein axis of each lens of the first lens array and axis of each lens of the second lens array are oriented parallel to the fast axis. 12. The apparatus of claim 5 , wherein the first wavelength is approximately 808 nm, the second wavelength is approximately 940 nm, and the third wavelength is approximately 1550 nm. 13. A thermal processing apparatus for processing a semiconductor substrate, comprising: a substrate support having a substrate receiving surface; an array of laser diode bars emitting laser radiation along an optical path intersecting the substrate receiving surface of the substrate support, the array of laser diode bars are arranged in plural parallel rows extending along a slow axis, wherein the rows of laser diode bars are arrayed in a stack along a fast axis, the slow-axis is generally perpendicular to the fast-axis, and the slow axis and the fast axis are orthogonal to the optical path; an illumination optics disposed along the optical path between the array of laser diode bars and the substrate support; a homogenizer disposed between the illumination optics and the substrate support, the homogenizer comprising: a first lens array of cylindrical lenses; and a second lens array of cylindrical lenses disposed parallel and spaced apart from the first lens array of cylindrical lenses, wherein at least two adjacent cylindrical lenses of the second lens array have a larger pitch than a pitch of at least two adjacent cylindrical lenses of the first lens array, and axis of each lens of the first lens array and axis of each lens of the second lens array are oriented parallel to the fast axis; and a condensing lens set disposed between the homogenizer and the substrate support along the optical path, the condensing lens set comprising at least five spherical lenses. 14. The apparatus of claim 13 , wherein the illumination optics comprises: a set of slow-axis lenses having at least a first cylindrical lens and a second cylindrical lens spaced apart from each other, the set of slow-axis lenses collimate laser beam radiation in the slow axis; and a set of fast-axis lenses having at least a first cylindrical lens and a second cylindrical lens spaced apart from each other, the set of fast-axis lenses being disposed between the first and second cylindrical lenses of the set of slow-axis lenses to collimate laser beam radiation in the fast axis. 15. The apparatus of claim 13 , wherein the first cylindrical lens of the set of slow-axis lenses has a convex lens surface facing toward the array of laser diode bars and the second cylindrical lens of the set of slow-axis lenses has a convex lens surface facing toward the surface of the substrate. 16. The apparatus of claim 13 , wherein the first cylindrical lens of the set of fast-axis lenses has a concave lens surface facing toward the array of laser diode bars and the second cylindrical lens of the set of fast-axis lenses has a convex lens surface facing toward the surface of the substrate. 17. The apparatus of claim 13 , wherein the set of slow-axis and fast-axis lenses have optic

Assignees

Inventors

Classifications

  • mainly by radiation · CPC title

  • H10P34/42Primary

    with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

  • Subject matter not provided for in other groups of this subclass · CPC title

  • Electricity · mapped topic

  • Shaping the laser beam, e.g. by masks or multi-focusing · CPC title

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What does patent US9636778B2 cover?
Embodiments of the present disclosure relate to an apparatus for thermally processing a semiconductor substrate. In one embodiment, the apparatus includes a substrate support, a beam source having a fast axis for emitting a beam along an optical path intersecting the substrate support, and a homogenizer disposed along the optical path between the beam source and the substrate support. The homog…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P34/42. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 02 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).