Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

Patent metadata

Field	Value
Publication number	US-9634162-B2
Application number	US-201314412055-A
Country	US
Kind code	B2
Filing date	Sep 3, 2013
Priority date	Dec 21, 2012
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag 2 Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag 2 Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag 2 Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

First claim

The invention claimed is:

1. A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film, comprising:
step (a) preparing a slurry by blending Se—Ag 2 Se core-shell nanoparticles, multi-component nanoparticles containing at least one element selected from the group consisting of Cu, In, Ga, Se and S, a solution precursor containing at least one element selected from the group consisting of Cu, In, Ga, Se and S, an alcohol solvent, and a binder;
step (b) non-vacuum coating a substrate with the slurry to form an A(C)IGS thin film; and
step (c) heat-treating the A(C)IGS thin film formed on the substrate for selenization,
wherein the Se—Ag 2 Se core-shell nanoparticles have a structure in which a core of Se is surrounded by Ag 2 Se,
wherein the multi-component nanoparticles are binary, ternary, or quaternary nanoparticles, and
wherein the binder comprises at least one selected from the group consisting of a chelating agent and a non-chelating agent.

2. The method according to claim 1 , wherein the multi-component nanoparticles comprises at least one kind of nanoparticles selected from the group consisting of: Cu—Se nanoparticles, In—Se nanoparticles, Ga—Se nanoparticles, Cu—S nanoparticles, In—S nanoparticles, Ga—S nanoparticles, Cu—In—Se nanoparticles, Cu—Ga—Se nanoparticles, In—Ga—Se nanoparticles, Cu—In—S nanoparticles, Cu—Ga—S nanoparticles, In—Ga—S nanoparticles, Cu—In—Ga—Se nanoparticles, and Cu—In—Ga—S nanoparticles.

3. The method according to claim 1 , wherein the multi-component nanoparticles are prepared by any one of methods including a low-temperature colloidal method, a solvothermal synthesis method, a microwave method, and an ultrasonic synthesis method.

4. The method according to claim 1 , wherein the solution precursor comprises at least one element selected from the group consisting of Cu, In, Ga, Se, and S, other than the elements contained in the multi-component nanoparticles.

5. The method according to claim 1 , wherein the solution precursor comprises at least one selected from the group consisting of indium acetate and gallium acetylacetonate.

6. The method according to claim 1 , wherein the alcohol solvent comprises at least one selected from the group consisting of ethanol, methanol, pentanol, propanol, and butanol.

7. The method according to claim 1 , wherein the chelating agent comprises at least one selected from the group consisting of monoethanolamine (MEA), diethanolamine (DEA), triethanolamine (TEA), ethylenediamine, ethylenediaminetetraacetic acid (EDTA), nitrilotriacetic acid (NTA), hydroxyethylenediaminetriacetic acid (HEDTA), glycol-bis(2-aminoethylether)-N,N, N′,N′-tetraacetic acid (GEDTA), triethylenetetraaminehexaacetic acid (TTHA), hydroxyethyliminodiacetic acid (HIDA), and dihydroxyethylglycine (DHEG).

8. The method according to claim 1 , wherein the non-chelating agent comprises at least one selected from the group consisting of ethylene glycol, propylene glycol, ethylcellulose, and polyvinyl pyrrolidone.

9. The method according to claim 1 , wherein step (a) further comprises ultrasonication for mixing and dispersion of the slurry.

10. The method according to claim 1 , wherein the non-vacuum coating of step (b) is performed by any one method selected from spraying, ultrasonic spraying, spin coating, doctor blade coating, screen-printing, and inkjet printing.

11. The method according to claim 1 , wherein step (b) further comprises drying after the non-vacuum coating is performed.

12. The method according to claim 1 , wherein step (b) comprises sequentially and repeatedly coating and drying a plurality of times.

13. The method according to claim 1 , wherein step (c) is carried out at a substrate temperature ranging from 450° C. to 500° C. for 10 to 30 minutes.

Assignees

• Korea Energy Research Inst

Inventors

• Cho Ara
• Yoon Kyung Hoon
• Ahn Sejin
• Yun Jae Ho
• Eo Young Joo
• Gwak Jihye
• Shin Kee Shik
• Ahn Seoungkyu
• Cho Jun Sik
• Yoo Jin-Su
• Park Joo Hyung

Classifications

• H01L31/1864

  Electricity · mapped topic

• H01L31/035209 Primary

  Electricity · mapped topic

• C01P2006/40

  Electric properties · CPC title

• H01L31/0322

  Electricity · mapped topic

• C01B19/007

  Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title