Semiconductor device and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9634082-B2
Application number	US-201615056286-A
Country	US
Kind code	B2
Filing date	Feb 29, 2016
Priority date	Nov 30, 2010
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first insulating film;
a second insulating film overlapping the first insulating film;
a stack of semiconductor films interposed between the first insulating film and the second insulating film, the stack of semiconductor films comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film; and

a gate electrode,
wherein the gate electrode and the stack of semiconductor films overlap, and
wherein a concentration in nitrogen of the first oxide semiconductor film is higher than a concentration in nitrogen of the second oxide semiconductor film.

2. The semiconductor device according to claim 1 ,
wherein a crystal structure of the second oxide semiconductor film is one of a YbFe 2 O 4 structure, a Yb 2 Fe 3 O 7 structure, a deformed structure of a YbFe 2 O 4 structure, and a deformed structure of a Yb 2 Fe 3 O 7 .

3. The semiconductor device according to claim 1 ,
wherein a crystal structure of the second oxide semiconductor film is a wurtzite structure.

4. The semiconductor device according to claim 1 ,
wherein the second oxide semiconductor film contains nitrogen at a concentration higher than or equal to 1×10 17 /cm 3 and lower than 5×10 19 /cm 3 in a channel region.

5. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film contains nitrogen at a concentration higher than or equal to 5×10 19 /cm 3 , and lower than 7 at. % in a channel region.

6. The semiconductor device according to claim 5 ,
wherein the concentration is higher than or equal to 1×10 20 /cm 3 .

7. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film is non-single-crystal and comprises an amorphous region and a crystal region having c-axis alignment.

8. The semiconductor device according to claim 1 ,
wherein the second oxide semiconductor film is non-single-crystal and comprises an amorphous region and a crystal region having c-axis alignment.

9. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor film and the second oxide semiconductor film are each non-single-crystal and comprise each an amorphous region and a crystal region having c-axis alignment.

10. A semiconductor device comprising:
a gate electrode;
a first insulating film over the gate electrode;
a second insulating film overlapping the first insulating film; and
a stack of semiconductor films interposed between the first insulating film and the second insulating film, the stack of semiconductor films comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film,

wherein the gate electrode and the stack of semiconductor films overlap, and
wherein a concentration in nitrogen of the first oxide semiconductor film is higher than a concentration in nitrogen of the second oxide semiconductor film.

11. The semiconductor device according to claim 10 ,
wherein a crystal structure of the second oxide semiconductor film is one of a YbFe 2 O 4 structure, a Yb 2 Fe 3 O 7 structure, a deformed structure of a YbFe 2 O 4 structure, and a deformed structure of a Yb 2 Fe 3 O 7 .

12. The semiconductor device according to claim 10 ,
wherein a crystal structure of the second oxide semiconductor film is a wurtzite structure.

13. The semiconductor device according to claim 10 ,
wherein the second oxide semiconductor film contains nitrogen at a concentration higher than or equal to 1×10 17 /cm 3 and lower than 5×10 19 /cm 3 in a channel region.

14. The semiconductor device according to claim 10 ,
wherein the first oxide semiconductor film contains nitrogen at a concentration higher than or equal to 5×10 19 /cm 3 , and lower than 7 at. % in a channel region.

15. A semiconductor device comprising:
a first insulating film;
a second insulating film overlapping the first insulating film;
a gate electrode over the second insulating film; and
a stack of semiconductor films interposed between the first insulating film and the second insulating film, the stack of semiconductor films comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film,

wherein the gate electrode and the stack of semiconductor films overlap, and
wherein a concentration in nitrogen of the first oxide semiconductor film is higher than a concentration in nitrogen of the second oxide semiconductor film.

16. The semiconductor device according to claim 15 ,
wherein a crystal structure of the second oxide semiconductor film is one of a YbFe 2 O 4 structure, a Yb 2 Fe 3 O 7 structure, a deformed structure of a YbFe 2 O 4 structure, and a deformed structure of a Yb 2 Fe 3 O 7 .

17. The semiconductor device according to claim 15 ,
wherein a crystal structure of the second oxide semiconductor film is a wurtzite structure.

18. The semiconductor device according to claim 15 ,
wherein the second oxide semiconductor film contains nitrogen at a concentration higher than or equal to 1×10 17 /cm 3 and lower than 5× 10 19 /cm 3 in a channel region.

19. The semiconductor device according to claim 15 ,
wherein the first oxide semiconductor film contains nitrogen at a concentration higher than or equal to 5×10 19 /cm 3 , and lower than 7 at. % in a channel region.

20. A semiconductor device comprising:
a first gate electrode,
a first insulating film over the first gate electrode;
a second insulating film overlapping the first insulating film;
a second gate electrode over the second insulating film; and
a stack of semiconductor films interposed between the first insulating film and the second insulating film, the stack of semiconductor films comprising:
a first oxide semiconductor film; and
a second oxide semiconductor film on and in contact with the first oxide semiconductor film,

wherein the first gate electrode, the stack of semiconductor films, and the second gate electrode overlap,
wherein a concentration in nitrogen of the first oxide semiconductor film is higher than a concentration in nitrogen of the second oxide semiconductor film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Takahashi Masahiro
• Maruyama Tetsunori

Classifications

• H10P14/3452

  Microstructure · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/3248

  consisting of two layers · CPC title