Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9419113-B2
Application number	US-201514881578-A
Country	US
Kind code	B2
Filing date	Oct 13, 2015
Priority date	May 29, 2009
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. A thin film transistor using an oxide semiconductor layer is formed in such a manner that buffer layers having higher conductivity than the oxide semiconductor layer are formed over the oxide semiconductor layer, source and drain electrode layers are formed over the buffer layers, and the oxide semiconductor layer is electrically connected to the source and drain electrode layers with the buffer layers interposed therebetween. In addition, the buffer layers are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere, whereby the buffer layers having higher conductivity than the oxide semiconductor layer are obtained.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating layer, using a sputtering method;
subjecting the first oxide semiconductor film to heat treatment;
forming a second oxide semiconductor film over the first oxide semiconductor film using a sputtering method;
subjecting the second oxide semiconductor film to reverse sputtering treatment;
subjecting the second oxide semiconductor film to heat treatment in a nitrogen atmosphere;
etching the first oxide semiconductor film and the second oxide semiconductor film to form an oxide semiconductor layer and a first buffer layer;
forming a conductive film over the oxide semiconductor layer and the first buffer layer;
etching the conductive film and the first buffer layer to form source and drain electrode layers, a second buffer layer, and a third buffer layer; and
subjecting the oxide semiconductor layer to heat treatment,
wherein the second buffer layer and the third buffer layer have higher conductivity than the oxide semiconductor layer.

2. The method for manufacturing a semiconductor device, according to claim 1 , wherein the first oxide semiconductor film is subjected to heat treatment in a nitrogen atmosphere.

3. The method for manufacturing a semiconductor device, according to claim 1 , wherein the first oxide semiconductor film is subjected to heat treatment in an air atmosphere.

4. The method for manufacturing a semiconductor device, according to claim 1 , wherein the oxide semiconductor layer is subjected to heat treatment in a nitrogen atmosphere.

5. The method for manufacturing a semiconductor device, according to claim 1 , wherein the oxide semiconductor layer is subjected to heat treatment in an air atmosphere.

6. The method for manufacturing a semiconductor device, according to claim 1 , wherein the heat treatment of the first oxide semiconductor film is performed at 250° C. to 500° C. inclusive.

7. The method for manufacturing a semiconductor device, according to claim 1 , wherein the heat treatment of the second oxide semiconductor film in a nitrogen atmosphere is performed at 250° C. to 500° C. inclusive.

8. The method for manufacturing a semiconductor device, according to claim 1 , wherein the heat treatment of the oxide semiconductor layer is performed at 250° C. to 500° C. inclusive.

9. The method for manufacturing a semiconductor device, according to claim 1 , wherein the second oxide semiconductor film is formed in an atmosphere of a rare gas and a nitrogen gas.

10. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
forming a first oxide semiconductor film over the gate insulating layer using a sputtering method;
subjecting the first oxide semiconductor film to heat treatment;
forming a second oxide semiconductor film over the first oxide semiconductor film using a sputtering method;
subjecting the second oxide semiconductor film to heat treatment in a nitrogen atmosphere;
subjecting the second oxide semiconductor film to reverse sputtering treatment;
etching the first oxide semiconductor film and the second oxide semiconductor film to form an oxide semiconductor layer and a first buffer layer;
forming a conductive film over the oxide semiconductor layer and the first buffer layer;
etching the conductive film and the first buffer layer to form source and drain electrode layers, a second buffer layer, and a third buffer layer; and
subjecting the oxide semiconductor layer to heat treatment,
wherein the second buffer layer and the third buffer layer have higher conductivity than the oxide semiconductor layer.

11. The method for manufacturing a semiconductor device, according to claim 10 , wherein the first oxide semiconductor film is subjected to heat treatment in a nitrogen atmosphere.

12. The method for manufacturing a semiconductor device, according to claim 10 , wherein the first oxide semiconductor film is subjected to heat treatment in an air atmosphere.

13. The method for manufacturing a semiconductor device, according to claim 10 , wherein the oxide semiconductor layer is subjected to heat treatment in a nitrogen atmosphere.

14. The method for manufacturing a semiconductor device, according to claim 10 , wherein the oxide semiconductor layer is subjected to heat treatment in an air atmosphere.

15. The method for manufacturing a semiconductor device, according to claim 10 , wherein the heat treatment of the first oxide semiconductor film is performed at 250° C. to 500° C. inclusive.

16. The method for manufacturing a semiconductor device, according to claim 10 , wherein the heat treatment of the second oxide semiconductor film in a nitrogen atmosphere is performed at 250° C. to 500° C. inclusive.

17. The method for manufacturing a semiconductor device, according to claim 10 , wherein the heat treatment of the oxide semiconductor layer is performed at 250° C. to 500° C. inclusive.

18. The method for manufacturing a semiconductor device, according to claim 10 , wherein the second oxide semiconductor film is formed in an atmosphere of a rare gas and a nitrogen gas.

Assignees

• Semiconductor Energy Lab

Inventors

• Asano Yuji
• Koezuka Junichi

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P95/70

  Chemical treatments · CPC title