Semiconductor device, a power semiconductor device, and a method for processing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9633957-B2
Application number	US-201414555736-A
Country	US
Kind code	B2
Filing date	Nov 28, 2014
Priority date	Nov 28, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including: a metallization layer including a first metal or metal alloy; a protection layer covering the metallization layer, the protection layer including a second metal or metal alloy, wherein the second metal or metal alloy is less noble than the first metal or metal alloy.

First claim

What is claimed is:

1. A semiconductor device comprising:
a layer stack formed at a surface of the semiconductor device, the layer stack comprising:
a metallization layer, the metallization layer comprising an aluminum alloy; and
a protection layer disposed directly on the metallization layer, the protection layer comprising a metal or metal alloy, wherein the metal or metal alloy is less noble than the aluminum alloy.

2. The semiconductor device according to claim 1 ,
wherein the metallization layer is a final metallization layer.

3. The semiconductor device according to claim 1 ,
wherein the metallization layer is configured as power metallization layer to carry an electrical current greater than about 1 A.

4. The semiconductor device according to claim 1 ,
wherein the semiconductor device comprises at least one semiconductor device of the following group of semiconductor devices, the group consisting of:
a diode;
a bipolar transistor;
a field effect transistor;
an insulated gate bipolar transistor; and
a thyristor.

5. The semiconductor device according to claim 1 ,
wherein the semiconductor device is configured as power semiconductor device to handle at least one of an electrical current greater than about 1 A or an electrical voltage greater than about 20 V.

6. The semiconductor device according to claim 1 , further comprising:
at least one of an electrically conductive liner or an electrically conductive diffusion barrier, wherein the metallization layer is disposed on the at least one of the electrically conductive liner or electrically conductive diffusion barrier.

7. The semiconductor device according to claim 1 , further comprising:
an encapsulation layer at least partially covering the protection layer.

8. The semiconductor device according to claim 7 ,
wherein the encapsulation layer comprises a polymer.

9. The semiconductor device according to claim 1 ,
wherein the first metal or metal alloy comprises a first standard electrode potential and wherein the second metal or metal alloy comprises a second standard electrode potential, wherein the first standard electrode potential is greater than the second standard electrode potential.

10. The semiconductor device according to claim 9 ,
wherein the first standard electrode potential is greater than or equal to about −1.66 V.

11. The semiconductor device according to claim 9 ,
wherein the second standard electrode potential is less than or equal to about −1.66 V.

12. The semiconductor device according to claim 1 ,
the aluminum alloy comprising aluminum and at least one metal or metalloid that is more noble than aluminum.

13. The semiconductor device according to claim 12 ,
wherein the aluminum alloy comprises at least one aluminum alloy of the following group of aluminum alloys, the group consisting of:
an aluminum/copper alloy,
an aluminum/manganese alloy,
an aluminum/zinc alloy,
an aluminum/silicon alloy,
an aluminum/silicon/copper alloy,
an aluminum/tin alloy.

14. The semiconductor device according to claim 1 ,
wherein the protection layer comprises at least one of aluminum or magnesium.

15. The semiconductor device according to claim 1 ,
wherein the metallization layer is made of an aluminum/copper alloy and wherein the protection layer is made of aluminum.

16. The semiconductor device according to claim 1 ,
wherein the metallization layer has a thickness greater than or equal to about 1 μm.

17. The semiconductor device according to claim 1 ,
wherein the protection layer has a thickness less than the thickness of the metallization layer.

18. A semiconductor device, comprising:
a final metallization layer comprising an aluminum alloy, and
a protection layer disposed directly on the final metallization layer, the protection layer comprising a metal or metal alloy, wherein the metal or metal alloy is less noble than the aluminum alloy.

19. A power semiconductor device comprising:
a power metallization layer comprising a contact pad; the contact pad comprising an aluminum/copper alloy; and
an at least 95% pure aluminum cover layer disposed directly on the contact pad of the power metallization layer.

Assignees

• Infineon Technologies Ag

Inventors

• Hilsenbeck Jochen
• Konrath Jens Peter
• Frank Thomas
• Rupp Roland

Classifications

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W72/934

  Cross-sectional shape, i.e. in side view · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title