Etching liquid, etching method, and method of manufacturing solder bump

Patent metadata

Field	Value
Publication number	US-9633898-B2
Application number	US-201514920104-A
Country	US
Kind code	B2
Filing date	Oct 22, 2015
Priority date	Jan 8, 2014
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

First claim

What is claimed is:

1. An etching method, comprising:
preparing a substrate on which a multilayer structure including a copper layer and a cobalt layer is formed by
applying a resist onto a copper seed layer formed on the substrate,
creating an opening in the resist,
forming a copper bump layer and the cobalt layer in the opening, and
removing the resist;

preparing an etching liquid including hydrogen peroxide and at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, the etching liquid having pH in a range of 4.3 to 5.5; and
bringing an exposed portion of the copper seed layer into contact with the etching liquid to thereby etch the exposed portion of the copper seed layer.

2. The etching method according to claim 1 , wherein the etching liquid further includes a pH adjuster including at least one of an aqueous sodium hydroxide, an aqueous solution of potassium hydroxide, an aqueous solution of ammonia, and an alkaline ionized water.

3. The etching method according to claim 1 , wherein the at least one acid is citric acid, and a concentration of citrate ions in the etching liquid is equal to or more than 0.2 mol/L.

4. The etching method according to claim 1 , wherein a concentration of the hydrogen peroxide is in a range of 0.7% to 10% by weight.

5. A method of manufacturing a solder bump, comprising:
applying a resist onto a copper seed layer;
creating an opening in the resist;
forming a copper bump layer, a cobalt layer, and a solder layer in this order in the opening by electroplating;
removing the resist; and
bringing an exposed portion of the copper seed layer into contact with an etching liquid to thereby etch the exposed portion of the copper seed layer,
the etching liquid including,
(i) at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid; and
(ii) hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Assignees

• Ebara Corp

Inventors

• Susaki Akira
• Kurashina Keiichi

Classifications

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/019

  of bond pads · CPC title

• H10W72/01953

  by etching · CPC title

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title