Vapor deposition of silicon-containing films using penta-substituted disilanes

Patent metadata

Field	Value
Publication number	US-9633838-B2
Application number	US-201514979816-A
Country	US
Kind code	B2
Filing date	Dec 28, 2015
Priority date	Dec 28, 2015
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

Disclosed are methods of depositing silicon-containing films on one or more substrates via vapor deposition processes using penta-substituted disilanes, such as pentahalodisilane or pentakis(dimethylamino)disilane.

First claim

We claim:

1. A thermal ALD method of depositing a silicon nitride film on a substrate, the method comprising:
a) Setting a reactor containing the substrate to a temperature ranging from approximately 450° C. to approximately 650° C. and a pressure ranging from approximately 0.1 to approximately 100 Torr (13 Pa to 1,333 Pa);
b) Introducing a vapor of pentachlorodisilane into the reaction chamber to form a silicon-containing layer on the substrate;
c) Reacting an nitrogen containing reactant with the silicon-containing layer to form a layer of the silicon nitride film having a thickness ranging from approximately 0.3 Å (0.03 nm) to approximately 2 Å (0.2 nm) and a refractive index ranging from approximately 1.8 to 2.1; and
d) Repeating steps b) and c).

2. The method of claim 1 , wherein the nitrogen containing reactant is NH 3 .

3. The method of claim 1 , wherein the silicon nitride film is deposited without using plasma.

4. The method of claim 1 , wherein the pressure ranging from approximately 4.75 to approximately 5.25 Torr (633 Pa to 700 Pa).

5. The method of claim 1 , wherein the thickness ranges from approximately 1 Å (0.1 nm) to approximately 2 Å (0.2 nm) and the refractive index ranges from approximately 2.0 to 2.1.

Assignees

• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventors

• Girard Jean-Marc
• Ko Changhee
• Oshchepkov Ivan
• Yanagita Kazutaka
• Okubo Shingo
• Noda Naoto
• Gatineau Julien

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6681

  the precursor containing a compound comprising Si · CPC title