Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Patent metadata

Field	Value
Publication number	US-9632411-B2
Application number	US-201314139457-A
Country	US
Kind code	B2
Filing date	Dec 23, 2013
Priority date	Mar 14, 2013
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

First claim

What is claimed is:

1. A photoresist deposition system comprising:
a vacuum chamber having a heating element and cooled chuck to hold a substrate,
the vacuum chamber having a heated inlet; and

a vapor deposition system connected to the heated inlet to volatilize a precursor into the vacuum chamber and to condense a vapor deposited photoresist over the substrate cooled by the cooled chuck.

2. The system as claimed in claim 1 wherein the vapor deposition system varies deposition composition and conditions during vapor deposition.

3. The system as claimed in claim 1 wherein the vapor deposition system provides the precursor of a volatile metal oxide for depositing the vapor deposited photoresist.

4. The system as claimed in claim 1 wherein the vapor deposition system provides the precursor of a metal alkoxide for depositing the vapor deposited photoresist.

5. The system as claimed in claim 1 wherein the vacuum chamber is for reacting the precursor with an oxidizing agent to convert a metal oxide precursor into a metal oxide photoresist.

6. The system as claimed in claim 1 wherein the vacuum chamber is for driving a gas phase reaction resulting in a molecular deposition over the substrate.

7. The system as claimed in claim 1 wherein the vapor deposition system is for reacting a ligand precursor that initiates a ligand replacement reaction around a metal center.

8. The system as claimed in claim 1 wherein the vapor deposition system is for providing a ligand precursor for bonding with a metal oxide formed in the vacuum chamber.

Assignees

• Applied Materials Inc

Inventors

• Michaelson Timothy
• Weidman Timothy W
• Chin Barry Lee
• Foad Majeed
• Deaton Paul

Classifications

• G03F7/09

  characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title

• G03F7/2037

  Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation · CPC title

• G03F7/70716 Primary

  Stages · CPC title

• G03F7/167 Primary

  from the gas phase, by plasma deposition (G03F7/2035 takes precedence) · CPC title