Apparatus for dielectric deposition process

Patent metadata

Field	Value
Publication number	US-9631273-B2
Application number	US-201213557904-A
Country	US
Kind code	B2
Filing date	Jul 25, 2012
Priority date	Jul 25, 2012
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

An apparatus comprises a first gas inlet coupled between a first pipe and a reaction chamber, wherein the first pipe configured to carry process gases, a second gas inlet coupled between a second pipe and the reaction chamber, wherein the second pipe configured to carry a precursor material in a gaseous state and a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material.

First claim

What is claimed is:

1. A structure comprising:
a first gas inlet in a manifold and coupled between a first pipe and a reaction chamber, wherein the first pipe is connected to a first gas input terminal on a top surface of the manifold, wherein the first pipe is configured to carry process gases, wherein the manifold has a first side outside the reaction chamber and a second side inside the reaction chamber;
a second gas inlet in the manifold and coupled between a second pipe and the reaction chamber, wherein the second pipe is connected to a second gas input terminal on a top surface of the manifold and configured to carry a precursor material in a gaseous state; and
a heating device in the manifold and coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the precursor material and wherein in order to prevent the process gases from cooling down the precursor material in the second pipe and the second gas inlet, the first pipe, the first gas inlet, the second pipe and the second gas inlet are configured such that a distance between the first gas inlet and the second gas inlet is greater than a distance between the first gas input terminal and the second gas input terminal, and wherein the first pipe and the second pipe are spaced apart and symmetrical with respect to a center line between the first gas inlet and the second gas inlet.

2. The structure of claim 1 , further comprising:
a third inlet coupled to the reaction chamber, wherein the third inlet is located between the first gas inlet and the second gas inlet.

3. The structure of claim 1 , wherein:
the first pipe and the second pipe are separated by a first distance greater than about 20 mm.

4. The structure of claim 1 , wherein:
the first gas inlet and the second gas inlet are separated by a second distance greater than about 20 mm.

5. The structure of claim 1 , wherein: the process gases include oxygen, ozone, or nitrogen.

6. The structure of claim 1 , wherein:
the precursor material is selected from the group consisting of tetraethoxysilane (TEOS), triethylborate (TEB) and triethylphosphate (TEPO).

7. The structure of claim 1 , wherein:
the boiling point is in a range from about 163 degrees to about 167 degrees.

8. An apparatus comprising:
a first inlet coupled to a chamber and located at a first middle point of a first half of a manifold, wherein the manifold has a first side outside the chamber and a second side inside the chamber;
a first pipe coupled between a process gas input terminal and the first inlet, wherein:
the first pipe is oriented to a first direction and configured to carry process gases; and
the first pipe is on a top surface of the manifold;
a second inlet coupled to the chamber and located at a second middle point of a second half of the manifold;
a second pipe coupled between a precursor gas input terminal and the second inlet, wherein:
the second pipe is oriented to a second direction and configured to carry a precursor material, wherein:
the second pipe is on the top surface of the manifold;
the first direction and the second direction are symmetrical relative to a divisional line between the first half and the second half of the manifold, and the first inlet, the second inlet, the process gas input terminal and the precursor gas input terminal form a trapezoidal shape; and
a heating device in the second half of the manifold and coupled to the second pipe and the second inlet, wherein a distance from the first inlet to the heating device is greater than a distance from the second inlet to the heating device, and wherein the heating device keeps an ambient temperature of the second pipe and the second inlet above a boiling point of the precursor material and wherein in order to prevent the process gases from cooling down the precursor material in the second pipe and the second inlet, the first pipe, the first inlet, the second pipe and the second inlet are configured such that a distance between the first inlet and the second inlet is greater than a distance between the process gas input terminal and the precursor gas input terminal, and wherein the first pipe and the second pipe are spaced apart and symmetrical with respect to the divisional line.

9. The apparatus of claim 8 , wherein:
the chamber is configured to carry out a plasma enhanced chemical vapor deposition (PECVD) process.

10. The apparatus of claim 8 , wherein:
the process gas input terminal and the precursor gas input terminal are separated by a first distance greater than about 20 mm.

11. The apparatus of claim 8 , wherein:
a cycling water inlet located between the first inlet and the second inlet, wherein the cycling water inlet is located at the divisional line between the first half and the second half of the manifold.

12. The apparatus of claim 8 , wherein:
the chamber is formed of a material selected from the group consisting of steel, stainless steel, nickel, aluminum and alloys thereof.

13. The apparatus of claim 8 , wherein:
the first pipe and the second pipe have a first minimum distance greater than about 20 mm.

14. The apparatus of claim 8 , wherein:
the first inlet and the second inlet have a second minimum distance greater than about 20 mm.

15. A system comprising:
a precursor delivery device comprising:
a precursor source comprising a vaporized precursor material; and
a first flow controller;

a process gas delivery device comprising:
a process gas source comprising a process gas; and
a second flow controller; and
a manifold coupled between the precursor delivery device, the process gas delivery device and a chamber, wherein the manifold has a first side outside the chamber and a second side inside the chamber, and wherein the manifold comprises:
a first gas inlet coupled between a first pipe and the chamber, wherein the first pipe is configured to carry the process gas and connected to a first gas input terminal, and wherein the first pipe and the first gas input terminal are on a top surface of the manifold;
a second gas inlet coupled between a second pipe and the chamber, wherein the second pipe is configured to carry the vaporized precursor material and connected to a second gas input terminal, and wherein the second pipe and the second gas input terminal are on a top surface of the manifold;
a cycling water inlet located between the first gas inlet and the second gas inlet, wherein the cycling water inlet, the first gas inlet and the second gas inlet form an isosceles triangle; and
a heating device coupled to the second pipe and the second gas inlet, wherein the heating device keeps an ambient temperature of the second pipe and the second gas inlet above a boiling point of the vaporized precursor material and wherein in order to prevent the process gas from cooling down the vaporized precursor material in the second pipe and the second gas inlet, the first pipe, the first gas inlet, the second pipe and the second gas inlet are configured such that a distance between the first gas inlet and the second gas inlet is greater than a distance between the first gas input terminal and the second gas input terminal, and wherein the first pipe and the second pipe are spaced apart and symmetrical with respect to a center line between the first gas inlet and the second gas inlet.

16. The system of claim 15 , wherein:
the first flow controller and the second flow controller are selected from the group consisting of a proportional valve, a modulating valve, a needle valv

Assignees

• Wang Lan-Hai
• Liu Ding-I
• Liao Si-Wen
• Leu Po-Hsiung
• Yang Yong-Hung
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wang Lan-Hai
• Liu Ding-I
• Liao Si-Wen
• Leu Po-Hsiung
• Yang Yong-Hung

Classifications

• C23C16/401 Primary

  containing silicon · CPC title

• C23C16/4557

  Heated nozzles · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title