Substrate processing method, substrate processing apparatus and non-transitory storage medium

Patent metadata

Field	Value
Publication number	US-9627232-B2
Application number	US-201414246714-A
Country	US
Kind code	B2
Filing date	Apr 7, 2014
Priority date	Apr 4, 2013
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

There is provided a substrate processing method including: supplying a developing liquid to a surface of an exposed substrate to form a resist pattern; supplying a cleaning liquid to the surface of the substrate to remove a residue generated in the developing step from the substrate; supplying a replacing liquid to the surface of the substrate to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force.

First claim

What is claimed is:

1. A substrate processing method, comprising:
supplying a developing liquid to a surface of an exposed substrate so as to form a resist pattern;
supplying a cleaning liquid to the surface of the substrate so as to remove a residue generated in the developing step from the substrate;
supplying a replacing liquid to the surface of the substrate so as to replace the cleaning liquid existing on the substrate with the replacing liquid, the replacing liquid having a surface tension of 50 mN/m or less and containing a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern; and
forming a dry region by supplying a gas to a central portion of the substrate while rotating the substrate so as to dry the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force, wherein forming the dry region comprises: rotating the substrate at a first revolution number when the gas is supplied to the central portion of the substrate; and then rotating the substrate at a second revolution number lower than the first revolution number until the dry region reaches the peripheral edge portion of the substrate.

2. The method of claim 1 , wherein the percolation inhibitor is a basic nitrogen compound.

3. The method of claim 1 , wherein supplying the cleaning liquid comprises: supplying the cleaning liquid to the central portion of the substrate; and rotating the substrate at a third revolution number so as to spread the cleaning liquid to the peripheral edge portion of the substrate with a centrifugal force, and wherein supplying the replacing liquid comprises: supplying the replacing liquid to the central portion of the substrate; and rotating the substrate at a fourth revolution number higher than the third revolution number so as to spread the replacing liquid to the peripheral edge portion of the substrate with a centrifugal force.

4. The method of claim 1 , wherein the first revolution number is from 1500 rpm to 2500 rpm.

5. The method of claim 1 , wherein the second revolution number is 1500 rpm or more and less than the first revolution number.

6. The method of claim 1 , further comprising:
supplying a gas to a position of the dry region spaced apart from the central portion of the substrate after the dry region is formed.

7. A substrate processing apparatus, comprising:
a holding unit configured to hold a substrate provided with a developed resist pattern on a surface thereof and to rotate the substrate around a vertical axis;
a cleaning liquid supply unit configured to supply a cleaning liquid to the surface of the substrate;
a replacing liquid supply unit configured to supply to the surface of the substrate a replacing liquid which has a surface tension of 50 mN/m or less and contains a percolation inhibitor for restraining the replacing liquid from percolating into a resist wall portion constituting the resist pattern;
a gas supply unit configured to supply a gas to a central portion of the substrate; and
a control unit configured to output control signals so as to control operations of the holding unit, the cleaning liquid supply unit, the replacing liquid supply unit and the gas supply unit,
wherein the control unit is configured to output control signals so as to perform supplying the cleaning liquid to the surface of the substrate in order to remove a residue generated in a developing process, supplying the replacing liquid to the surface of the substrate in order to replace the cleaning liquid existing on the surface of the substrate with the replacing liquid, forming a dry region by supplying a gas to the central portion of the substrate while rotating the substrate, and drying the surface of the substrate by expanding the dry region to a peripheral edge portion of the substrate with a centrifugal force, and
wherein the control unit is further configured to output control signals so as to perform rotating the substrate at a first revolution number when the gas is supplied to the central portion of the substrate and then rotating the substrate at a second revolution number lower than the first revolution number until the dry region reaches the peripheral edge portion of the substrate.

8. The apparatus of claim 7 , wherein the cleaning liquid supply unit is configured to supply the cleaning liquid to the central portion of the substrate, the replacing liquid supply unit is configured to supply the replacing liquid to the central portion of the substrate, and the control unit is configured to output control signals so as to perform rotating the substrate at a third revolution number in order to spread the cleaning liquid to the peripheral edge portion of the substrate with a centrifugal force and perform rotating the substrate at a fourth revolution number higher than the third revolution number in order to spread the replacing liquid to the peripheral edge portion of the substrate with a centrifugal force.

9. A non-transitory storage medium which stores a computer program for use in a substrate processing apparatus configured to clean a substrate provided with a developed and patterned resist film on a surface thereof, the program causing the computer to perform the substrate processing method of claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Tanaka Keiichi
• Yoshihara Kousuke
• Iseki Tomohiro

Classifications

• H10P72/0408

  for drying · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• G03F7/3021

  from a wafer supported on a rotating chuck · CPC title

• B08B3/024

  Cleaning by means of spray elements moving over the surface to be cleaned · CPC title