Silicon-containing EUV resist underlayer film-forming composition including additive

Patent metadata

Field	Value
Publication number	US-9627217-B2
Application number	US-201314390870-A
Country	US
Kind code	B2
Filing date	Feb 22, 2013
Priority date	Apr 23, 2012
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

There is provided a composition for forming an EUV resist underlayer film which shows a good resit form. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. A resist underlayer film-forming composition for EUV lithography, including: polysiloxane (B) containing a hydrolyzed condensate of hydrolyzable silane (a) and hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure. The polysiloxane (A) is preferably a co-hydrolyzed condensate of a tetraalkoxysilane, an alkyltrialkoxysilane and an aryltrialkoxysilane.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition for EUV lithography, comprising:
water;
polysiloxane (A) containing a hydrolyzed condensate of hydrolyzable silane (a); and
hydrolyzable silane compound (b) having a sulfonamide structure, a carboxylic acid amide structure, a urea structure, or an isocyanuric acid structure.

2. The resist underlayer film-forming composition according claim 1 , wherein
hydrolyzable silane (a) is at least one hydrolyzable silane selected from the group consisting of a tetraalkoxysilane, an alkyltrialkoxysilane, and an aryltrialkoxysilane.

3. The resist underlayer film-forming composition according to claim 2 , wherein
the alkyltrialkoxysilane is a methyltrialkoxysilane.

4. The resist underlayer film-forming composition according to claim 2 , wherein
the aryltrialkoxysilane is a phenyltrialkoxysilane.

5. The resist underlayer film-forming composition according to claim 1 , wherein
the hydrolyzable silane compound (b) is a silane compound of General Formula (b-1):
R 3 —R 2 —R 1 —Si(R 4 ) 3   Formula (b-1)

where
R 4 is a C 1-10 alkoxy group;
R 1 is a C 1-10 alkylene group;
R 3 is a hydrogen atom, a C 1-10 alkyl group, a C 1-10 fluoroalkyl group, a C 2-10 alkenyl group, or a C 6-20 aryl group; and
R 2 is selected from the group consisting of
a sulfonamide structure,
a carboxylic acid amide structure,
a urea structure,
an isocyanuric acid structure,

6. The resist underlayer film-forming composition according to claim 1 , wherein
polysiloxane (A) is obtained by co-hydrolyzing and condensing 70 mol of a tetraalkoxysilane with 10 to 35 mol of an alkyltrialkoxysilane and 2 to 25 mol of an aryltrialkoxysilane.

7. The resist underlayer film-forming composition according to claim 1 , further comprising an acid compound.

8. The resist underlayer film-forming composition according to claim 1 , further comprising an ammonium compound, a cyclic ammonium compound, a cyclic amine compound, or a sulfonium compound.

9. A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate, and then baking the applied resist underlayer film-forming composition.

10. A method for manufacturing a semiconductor device, the method comprising:
forming a resist underlayer film by applying the resist underlayer film-forming composition as claimed in claim 1 onto a semiconductor substrate, and then baking the applied resist underlayer film-forming composition;
forming a resist film by applying a composition for a resist onto the resist underlayer film;
exposing the resist film to light;
obtaining a patterned resist film by developing the exposed resist film;
etching the resist underlayer film with the patterned resist film; and
processing the semiconductor substrate with the patterned resist film and the resist underlayer film.

11. The method for manufacturing a semiconductor device according to claim 10 , wherein
the development is conducted with an alkaline aqueous solution or an organic solvent.

12. A method for manufacturing a semiconductor device, the method comprising:
forming an organic underlayer film on a semiconductor substrate;
forming a resist underlayer film by applying the resist underlayer film-forming composition as claimed in claim 1 onto the organic underlayer film, and then baking the applied resist underlayer film-forming composition;
forming a resist film by applying a composition for a resist onto the resist underlayer film;
exposing the resist film to light;
obtaining a patterned resist film by developing the exposed resist;
etching the resist underlayer film with the patterned resist film;
etching the organic underlayer film with the patterned resist underlayer film; and
processing the semiconductor substrate with the patterned organic underlayer film.

13. The resist underlayer film-forming composition according to claim 1 , wherein
the hydrolyzable silane compound (b) is a silane compound of General Formula (b-1):
R 3 —R 2 —R 1 —Si(R 4 ) 3   Formula (b-1)

where
R 1 is a C 1-10 alkylene group;
R 2 is selected from the group consisting of

R 3 is a hydrogen atom, a C 1-10 alkyl group, a C 1-10 fluoroalkyl group, a C 2-10 alkenyl group, or a C 6-20 aryl group; and
R 4 is a C 1-10 alkoxy group.

14. The resist underlayer film-forming composition according to claim 1 , wherein
the hydrolyzable silane compound (b) is a silane compound of General Formula (b-1):
R 3 —R 2 —R 1 —Si(R 4 ) 3   Formula (b-1)

where
R 1 is a C 1-10 alkylene group;
R 2 is selected from the group consisting of
a sulfonamide structure,
a carboxylic acid amide structure,
a urea structure, and
an isocyanuric acid structure;

R 3 is a hydrogen atom, a C 1-10 alkyl group, a C 1-10 fluoroalkyl group, a C 2-10 alkenyl group, or a C 6-20 aryl group; and
R 4 is a C 1-10 alkoxy group.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Shigaki Shuhei
• Yaguchi Hiroaki
• Shibayama Wataru
• Sakamoto Rikimaru
• Ho Bangching

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• C08G77/26

  nitrogen-containing groups · CPC title

• G03F7/094 Primary

  Multilayer resist systems, e.g. planarising layers · CPC title

• G03F7/0751 Primary

  used as adhesion-promoting additives or as means to improve adhesion · CPC title