Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program

Patent metadata

Field	Value
Publication number	US-9627184-B2
Application number	US-96006410-A
Country	US
Kind code	B2
Filing date	Dec 3, 2010
Priority date	Jan 26, 2005
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A 1 (=Q 1 ×m 1 ) of the flow rate Q 1 and the molecular weight m 1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

First claim

What is claimed is:

1. A plasma processing method, comprising the sequential steps of:
loading a target object into a processing chamber;
plasma processing the target object by using a plasma generated from a first gas introduced into the processing chamber under a first condition;
unloading the target object from the processing chamber;
performing, after unloading the target object, a particle removing process in which a second gas is introduced into the processing chamber under a second condition and particles, which are not removed from the processing chamber by the first gas, are removed from an inside of the processing chamber by discharging the second gas from the processing chamber;
introducing a third gas into the processing chamber;
generating a plasma of the third gas in the processing chamber;
removing deposits remaining in the processing chamber by using the plasma of the third gas; and
discharging the third gas from the processing chamber,
wherein the first condition is a product of a flow rate and a gas molecular weight of the first gas and the second condition is a product of a flow rate and a gas molecular weight of the second gas,
wherein said performing the particle removing process is carried out prior to generating the plasma from the third gas and the flow rate of the second gas is controlled during the particle removing process such that a magnitude of the second condition is greater than that of the first condition to thereby remove the particles by a gas viscous force of the second gas, and
wherein the second gas and the third gas each consist essentially of oxygen gas.

2. The plasma processing method of claim 1 , wherein the magnitude of the second condition is greater than 1.05 times that of the first condition.

3. The plasma processing method of claim 1 , wherein the flow rate of the second gas is set by adding 100 sccm to the flow rate of the first gas.

4. The plasma processing method of claim 1 , wherein the first gas is identical to the second gas.

5. The plasma processing method of claim 1 , wherein the first gas is different from the second gas.

Assignees

• Moriya Tsuyoshi
• Nakayama Hiroyuki
• Nagaike Hiroshi
• Tokyo Electron Ltd

Inventors

• Moriya Tsuyoshi
• Nakayama Hiroyuki
• Nagaike Hiroshi

Classifications

• H01J37/32862 Primary

  In situ cleaning of vessels and/or internal parts · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/3244

  Gas supply means · CPC title