Apparatus and method
US-2024014022-A1 · Jan 11, 2024 · US
US9627174B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9627174-B2 |
| Application number | US-201514973424-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2015 |
| Priority date | Jun 29, 2012 |
| Publication date | Apr 18, 2017 |
| Grant date | Apr 18, 2017 |
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A high brightness ion source with a gas chamber includes multiple channels, wherein the multiple channels each have a different gas. An electron beam is passed through one of the channels to provide ions of a certain species for processing a sample. The ion species can be rapidly changed by directing the electrons into another channel with a different gas species and processing a sample with ions of a second species. Deflection plates are used to align the electron beam into the gas chamber, thereby allowing the gas species in the focused ion beam to be switched quickly.
Opening claim text (preview).
We claim as follows: 1. A charged particle beam system, comprising: an electron source for providing a beam of electrons along an optical axis within a vacuum chamber; multiple chambers, at least one of the multiple chambers having a gas inlet and adapted for containing gas to interact with the electrons to produce ions; a first deflector for selectively deflecting the electron beam into different ones of the multiple chambers or into a bypass area in which the electrons are passed through; one or more extractor electrodes for extracting ions from at least one of the multiple chambers; and a second deflector for aligning the extracted ions with the optical axis. 2. The charged particle beam system of claim 1 further comprising a focusing lens for focusing the extracted ions onto a work piece. 3. The charged particle beam system of claim 1 in which at least one of the multiple chambers includes an inlet for connecting to a gas source. 4. The charged particle beam system of claim 1 in which the first deflector includes two parts, a first part to deflect the electron beam away from the optical axis and a second part to deflect the electrons onto a second optical axis, parallel to the first optical axis and concentric with one of the multiple chambers. 5. The charged particle beam system of claim 1 in which the second deflector includes two parts, a first part to deflect the ion beam away from the second axis and a second part to deflect the ions onto the first optical axis. 6. The charged particle beam system of claim 1 further comprising a controller for controlling the alignment of the electrons from the first deflector and the alignment of the ions from the second deflector. 7. The charged particle beam system of claim 1 further comprising a program memory for inputting instructions for processing a sample, the instructions including switching from a first ion species to directing the electron beam at the sample during sample processing. 8. A method of providing multiple charged particle species for charged particle beam applications, comprising: generating a beam of electrons; passing the beam of electrons into a first chamber to interact with a gas in the chamber to produce charged particles of a first species; extracting the charged particles from the first chamber; directing the charged particles onto a work piece through a charged particle beam optical column; and passing the beam of electrons along a path not passing through the first chamber, to provide electrons through the charged particle beam optical column to the work piece. 9. The method of claim 8 in which extracting charged particles from the first chamber comprises extracting ions of a first species from the first chamber. 10. The method of claim 9 further comprising: passing the beam of electrons into a second chamber containing a gas to produce ions of a second species; extracting ions of the second species from the second chamber; and directing the ions of the second species onto the work piece, the method providing for switching between ions or electrons to be directed toward the work piece without opening the vacuum containing the work piece. 11. The method of claim 8 in which switching from passing the beam of electrons into a first chamber to passing the beam of electrons along a path not passing through the first chamber is performed in less than 0.1 seconds. 12. The method of claim 8 in which passing the electrons into a first chamber or passing the electrons along a path not passing through the first chamber includes deflecting the electrons from a first optical axis. 13. The method of claim 12 in which deflecting the electrons from a first optical axis includes deflecting the electrons onto a path parallel to the first optical axis. 14. The method of claim 12 further comprising deflecting the charged particles extracted from the first chamber or deflecting the electron beam back onto the first optical axis. 15. A charged particle beam system, comprising: an electron source operable to create an electron beam; a first chamber having a gas inlet and adapted for containing a gas to interact with the electrons of the electron beam to produce charged particles; an extractor operable to extract charged particles from the first chamber; and a charged particle optical column for directing a beam of charged particles toward a work piece; wherein the system is configured to selectively operate in either a first mode in which the electron beam passes into the first chamber and charged particles extracted from the first chamber are directed through the charged particle beam column toward the work piece, or in a second mode in which the electron beam passes through the charged particle optical column toward the work piece without passing through the first chamber. 16. The charged particle beam system of claim 15 further comprising a control device operable to selectively place the system in the first mode or in the second mode. 17. The charged particle beam system of claim 15 in which the extractor electrode is configured to extract ions from the first chamber. 18. The charged particle beam system of claim 15 further comprising a first deflector operable for deflecting the electron beam into the first chamber or for deflecting the electron beam to bypass the first chamber and a second deflector operable to align extracted charged particles or the beam of electrons with a focusing column. 19. The charged particle beam system of claim 15 further comprising one or more additional chambers adapted for containing a gas to interact with the electron beam to produce charged particles. 20. The charged particle beam system of claim 15 further comprising a second chamber that does not contain gas and in which the control device is programmed in the second mode to pass the electron beam through the second chamber that does not contain gas or outside of chambers containing gas.
Ion sources; Ion guns · CPC title
Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece, (H01J37/3244 takes precedence; environmental cells for electron microscopes H01J2237/2003; microscopes with environmental specimen chamber H01J2237/2608) · CPC title
for producing different ions sequentially · CPC title
Electron beam · CPC title
Focused ion beam · CPC title
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