Computation efficiency by diffraction order truncation

Patent metadata

Field	Value
Publication number	US-9625937-B2
Application number	US-19334108-A
Country	US
Kind code	B2
Filing date	Aug 18, 2008
Priority date	Aug 18, 2008
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

A method for improving computation efficiency for diffraction signals in optical metrology is described. The method includes simulating a set of diffraction orders for a three-dimensional structure. The diffraction orders within the set of diffraction orders are then prioritized. The set of diffraction orders is truncated to provide a truncated set of diffraction orders based on the prioritizing. Finally, a simulated spectrum is provided based on the truncated set of diffraction orders.

First claim

What is claimed is:

1. A method comprising:
simulating a diffraction signal for a certain three-dimensional structure using a processing unit of an optical metrology system, the diffraction signal being calculated from a set of diffraction orders;
prioritizing the diffraction orders, the set of diffraction orders representing a matrix of diffraction orders in a Fourier transformation, wherein a subset of the set of diffraction orders may be defined with a truncation schema having a basic schema shape;
for each of a plurality of truncation schemas, each truncation schema having a basic non-rectangular schema shape, determining a difference between a result generated by the truncation schema and a result generated by a rectangular schema;
comparing the difference for each of the plurality of truncation schemas to an error threshold;
selecting a truncation schema of the plurality of truncation schemas for the three-dimensional structure that provides a best result based at least in part on the comparison of the difference for each of the plurality of truncation schemas to the error threshold;
truncating the set of diffraction orders based on the selected truncation schema, wherein truncating the set of diffraction orders includes the processing unit retaining only diffraction orders presented in the matrix of diffraction orders that are within the selected truncation schema;
determining the simulated diffraction signal based on calculations using the truncated set of diffraction orders; and
comparing the simulated diffraction signal to a diffraction signal measured from the three dimensional structure using an optical metrology tool.

2. The method of claim 1 , wherein determining the difference between the result generated by each truncation schema and the result generated by a rectangular schema includes:
running an order convergence for the truncation schema and determining a convergence order for the truncation schema;
obtaining a reflectance result for the truncation schema based on the determined convergence order for the truncation schema; and
determining a difference between the reflectance result for the truncation schema and a reflectance result for a rectangular schema.

3. The method of claim 1 , wherein the error threshold represents a maximum tolerance in error that is acceptable for a particular calculation based on a truncation scheme.

4. The method of claim 3 , wherein the maximum tolerance is a noise level from the optical metrology tool.

5. The method of claim 1 , wherein each truncation schema of the plurality of truncation schemas represents a group of diffraction orders in the matrix of diffraction orders around a zeroth order of the diffraction orders.

6. The method of claim 1 , wherein the basic schema shape is selected from the group consisting of a diamond, a circle, and a star.

7. The method of claim 6 , wherein the basic schema shapes include a shape that is rotated in the matrix of diffraction orders.

8. The method of claim 1 , wherein the optical metrology tool includes a reflectometer or ellipsometer.

9. An optical metrology system comprising:
a memory including storage for a library with a plurality of simulated diffraction signals and a plurality of values of one or more profile parameters associated with the plurality of simulated diffraction signals;
an optical metrology tool to measure a diffraction signal obtained from the three-dimensional structure; and
a processing unit to generate the library, the processing unit to:
simulate a diffraction signal for a certain three-dimensional structure, the diffraction signal being calculated from a set of diffraction orders,
prioritize the diffraction orders, the set of diffraction orders representing a matrix of diffraction orders in a Fourier transformation, wherein a subset of the set of diffraction orders may be defined with a truncation schema having a basic schema shape;
for each of a plurality of truncation schemas, each truncation schema having a basic non-rectangular schema shape, determine a difference between a result generated by the truncation schema and a result generated by a rectangular schema;
compare the difference for each of the plurality of truncation schemas to an error threshold;
select a truncation schema of the plurality of truncation schemas for the three-dimensional structure that provides a best result based at least in part on the comparison of the difference for each of the plurality of truncation schemas to the error threshold;
truncate the set of diffraction orders based on the selected truncation schema, wherein truncating the set of diffraction orders includes the processing unit to retain only diffraction orders presented in the matrix of diffraction orders that are within the selected truncation schema;
determine the simulated diffraction signal based on calculations using the truncated set of diffraction orders; and
compare the simulated diffraction signal to a diffraction signal measured from the three-dimensional structure using the optical metrology tool.

10. The system of claim 9 , wherein the optical metrology tool includes a reflectometer or ellipsometer.

11. The system of claim 9 , wherein determining the difference between the result generated by each truncation schema and the result generated by a rectangular schema includes:
running an order convergence for the truncation schema and determining a convergence order for the truncation schema;
obtaining a reflectance result for the truncation schema based on the determined convergence order for the truncation schema; and
determining a difference between the reflectance result for the truncation schema and a reflectance result for a rectangular schema.

12. The system of claim 9 , wherein the error threshold represents a maximum tolerance in error that is acceptable for a particular calculation based on a truncation scheme.

13. The system of claim 12 , wherein the maximum tolerance is a noise level from the optical metrology tool.

14. The system of claim 9 , wherein each truncation schema represents a group of diffraction orders in the matrix of diffraction orders around a zeroth order of the diffraction orders.

15. The system of claim 9 , wherein the basic schema shape is selected from the group consisting of a diamond, a circle, and a star.

16. The system of claim 15 , wherein the basic schema shapes include a shape that is rotated in the matrix of diffraction orders.

17. A non-transitory computer-readable storage medium having stored thereon data representing sequences of instructions that, when executed by a processor, cause the processor to perform operations comprising:
simulating a diffraction signal for a certain three-dimensional structure, the diffraction signal being calculated from a set of diffraction orders;
prioritizing the diffraction orders, the set of diffraction orders representing a matrix of diffraction orders in a Fourier transformation, wherein a subset of the set of diffraction orders may be defined with a truncation schema having a basic schema shape;
for each of a plurality of truncation schemas, each truncation schema having a basic non-rectangular schema shape, determining a difference between a result generated by the truncation schema and a result generated by a rectangular schema;
comparing the difference for each of the plurality of truncation schemas to an error threshold;
selecting a truncation schema of the plurality of truncation schemas for the three-dimensional structure that provides a best result based at least in part on the comparison of th

Assignees

• Bischoff Joerg
• Li Shifang
• Yang Weidong
• Chu Hanyou
• Kla Tencor Corp

Inventors

• Bischoff Joerg
• Li Shifang
• Yang Weidong
• Chu Hanyou

Classifications

• G06E1/00 Primary

  Devices for processing exclusively digital data · CPC title