Capacitive acceleration sensor with a bending elastic beam and preparation method thereof

Patent metadata

Field	Value
Publication number	US-9625487-B2
Application number	US-201214387364-A
Country	US
Kind code	B2
Filing date	Dec 4, 2012
Priority date	Oct 26, 2012
Publication date	Apr 18, 2017
Grant date	Apr 18, 2017

Abstract

The present invention provides a capacitive acceleration sensor with a bending elastic beam and a preparation method. The sensor at least includes a first electrode structural layer, a middle structural layer and a second electrode structural layer; wherein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively; the middle structural layer includes: a frame formed on a SOI silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, wherein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space. Since the bending times, the total length and the total width of the bending elastic beam can be prepared as needed, capacitive acceleration sensors with different sensitivities can be manufactured according to the present invention, and the manufacturing has high flexibility.

First claim

What is claimed is:

1. A method for preparing a capacitive acceleration sensor with a bending elastic beam, at least including:
1) performing etching at two surfaces of a SOI silicon substrate with a double device layer based on an anisotropic etching method, causing the two surfaces to be concave respectively;
2) forming a plurality of anti-overloading bumps at recesses on the two surfaces based on photolithography and the anisotropic etching method, respectively;
3) further forming damping grooves at the two surfaces of the structure on which the anti-overloading bumps have been formed based on photolithography and the anisotropic etching method, respectively;
4) performing etching on the two surfaces of the structure on which the damping grooves have been formed, respectively, based on photolithography and dry etching, and etching self-stops at a buried oxide layer, whereby on the two surfaces is formed a structure where the frame and the seismic mass are connected to the bending elastic beam, respectively, and the anti-overloading bumps and the damping grooves are caused to be positioned on the corresponding seismic mass, and the bending elastic beams of the two surfaces are staggered distributed and are not overlapped with each other in space;
5) releasing the bending elastic beam and the seismic mass based on photolithography, dry etching and the anisotropic etching method;
6) simultaneously bonding the first electrode structural layer, the structure comprising the released bending elastic beam and the seismic mass, and the second electrode structural layer based on a bonding process;
7) forming electrode lead via-holes at the first electrode structural layer and the second electrode structural layer of the bonded structure based on infrared aligning; and
8) preparing an electrode on the structure on which the via-holes have been formed.

2. The method for preparing a capacitive acceleration sensor with a bending elastic beam according to claim 1 , wherein the dry etching is inductively coupled plasma etching or deep reactive ion etching.

3. The method for preparing a capacitive acceleration sensor with a bending elastic beam according to claim 1 , wherein the photolithography is performed along <110 > crystal orientation.

4. The method for preparing a capacitive acceleration sensor with a bending elastic beam according to claim 1 , wherein the depth of the recess formed in step 1) does not exceed 3 μm.

5. The method for preparing a capacitive acceleration sensor with a bending elastic beam according to claim 1 , wherein the height of the anti-overloading bumps does not exceed 1 μm.

6. The method for preparing a capacitive acceleration sensor with a bending elastic beam according to claim 1 , wherein there are bending elastic beams connected at each of four sides of the seismic mass.

7. The method for preparing a capacitive acceleration sensor with a bending elastic beam according to claim 6 , wherein the width B of the damping groove satisfies the requirement therebetween: B<√{square root over (2)}H, where H is the thickness of a silicon layer of the oxygen containing silicon substrate which is used as the device layer.

8. A capacitive acceleration sensor with a bending elastic beam, at least including:
a first electrode structural layer, a middle structural layer and a second electrode structural layer;
therein the first electrode structural layer and the second electrode structural layer are provided with an electrode lead via-hole, respectively;
the middle structural layer includes a frame formed on an oxygen containing silicon substrate with a double device layers, a seismic mass whose double sides are symmetrical and a bending elastic beam with one end connected to the frame and the other end connected to the seismic mass, therein anti-overloading bumps and damping grooves are symmetrically provided on two sides of the seismic mass, and the bending elastic beams at different planes are staggered distributed and are not overlapped with each other in space.

9. The capacitive acceleration sensor with a bending elastic beam according to claim 8 , wherein each of four sides of the seismic mass is connected to the bending elastic beam.

10. The capacitive acceleration sensor with a bending elastic beam according to claim 8 , wherein the width B of the damping groove requirement therebetween: B<√{square root over (2)}H, where H is the thickness of a silicon layer of the oxygen containing silicon substrate which is used as the device layer.

Assignees

• Shanghai Inst Microsystem & Information Tech Cas

Inventors

• Che Lufeng
• Zhou Xiaofeng
• Wang Yuelin

Classifications

• B81C1/00531

  Dry etching · CPC title

• G01P15/125 Primary

  by capacitive pick-up · CPC title

• B81C1/00341

  Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261 · CPC title

• G01P2015/0882

  for providing damping of vibrations · CPC title

• G01P2015/0871

  using stopper structures for limiting the travel of the seismic mass · CPC title