Planar cavity MEMS and related structures, methods of manufacture and design structures
US-9352954-B2 · May 31, 2016 · US
US9624099B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9624099-B2 |
| Application number | US-201514966128-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 11, 2015 |
| Priority date | Jun 25, 2010 |
| Publication date | Apr 18, 2017 |
| Grant date | Apr 18, 2017 |
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A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
Opening claim text (preview).
What is claimed is: 1. A design structure comprising data tangibly embodied in a machine readable storage medium for designing, manufacturing, or simulating a moveable beam, the data when processed on a data processing system generate a functional representation of the moveable beam, comprising: at least one insulator layer on a conductor layer such that a volume of the conductor is adjusted to modify beam bending characteristics; and an upper electrode over the at least one insulator layer on top of the conductor layer, wherein the conductor layer and the upper electrode are different in thicknesses relative to one another, with a metal volume of the upper electrode and the conductor layer being balanced. 2. The design structure of claim 1 , wherein a metal volume of the conductor layer and the metal volume of the upper electrode are based at least on the layout of the conductor layer. 3. The design structure of claim 2 , wherein the conductor layer and the upper electrode are a same material, and the conductor layer and the upper electrode are composed of Ti/AlCu/Ti/TiN. 4. The design structure of claim 2 , wherein the conductor layer and the upper electrode are asymmetric relative to one another. 5. The design structure of claim 1 , wherein the conductor layer is in a trench. 6. The design structure of claim 1 , wherein the upper electrode is U-shaped with a via between opposing sides of the upper electrode.
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