Single phase differential conversion circuit, balun, switch, and communication device

US9621139B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9621139-B2
Application numberUS-201314394660-A
CountryUS
Kind codeB2
Filing dateMay 14, 2013
Priority dateMay 28, 2012
Publication dateApr 11, 2017
Grant dateApr 11, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided with one or more first transistors of a first conductivity type each including a gate, a source, and a drain, the gate being connected to an input terminal, the source being configured to be connected to a first voltage source, the drain being connected to an output node, one or more second transistors of a second conductivity type each including a gate, a source, and a drain, the gate being connected to the input terminal, the source being configured to be connected to a second voltage source, the drain being connected to the output node, a first resistor that is inserted and connected between the input terminal and the output node, a first output terminal that is connected to the input terminal, and a second output terminal that is directly or indirectly connected to the output node.

First claim

Opening claim text (preview).

The invention claimed is: 1. A balun, comprising: one or more first transistors of a first conductivity type each including a first gate, a first source, and a first drain, wherein the first gate is connected to an input terminal, the first source is connected to a first voltage source, and the first drain is connected to an output node; one or more second transistors of a second conductivity type each including a second gate, a second source, and a second drain, wherein the second gate is connected to the input terminal, the second source is connected to a second voltage source, and the second drain is connected to the output node; a first resistor directly connected between the input terminal and the output node, wherein the output node is configured to form a junction of the first drain of the one or more first transistors and the second drain of the one or more second transistors; a first output terminal connected to the input terminal; and a second output terminal directly or indirectly connected to the output node. 2. A switch configured to control a balun, the switch comprising: one or more switching transistors each including a control terminal, wherein the one or more switching transistors are configured to select at least one of one or more first transistors of a first conductivity type or one or more second transistors of a second conductivity type; and a nonlinear circuit configured to be respectively connected to the control terminal of each of the one or more switching transistors, wherein the balun comprises: the one or more first transistors each including a first gate, a first source, and a first drain, wherein the first gate is connected to an input terminal, the first source is connected to a first voltage source and the first drain is connected to an output node; the one or more second transistors each including a second gate, a second source, and a second drain, wherein the second gate is connected to the input terminal, the second source is connected to a second voltage source, and the second drain is connected to the output node; a first resistor connected between the input terminal and the output node, wherein the output node is configured to form a junction of the first drain of the one or more first transistors and the second drain of the one or more second transistors; a first output terminal connected to the input terminal; and a second output terminal directly or indirectly connected to the output node. 3. The switch according to claim 2 , wherein the one or more switching transistors include an N-type transistor, and impedance of the nonlinear circuit decreases with an increase in a voltage of the control terminal. 4. The switch according to claim 2 , wherein the one or more switching transistors include a P-type transistor, and impedance of the nonlinear circuit increases with an increase in a voltage of the control terminal. 5. The switch according to claim 2 , wherein the nonlinear circuit includes a transistor. 6. The switch according to claim 5 , wherein the transistor includes a gate, a drain, and a source, and one of the drain, the source, or the gate are connected to each other. 7. The switch according to claim 6 , wherein the transistor is a P-type transistor, and the control terminal is connected to another of the drain or the source of the transistor. 8. The switch according to claim 6 , wherein the transistor is an N-type transistor, and the control terminal is connected to one of the drain or the source of the transistor. 9. The switch according to claim 7 , wherein each of the one or more switching transistors is configured to be turned on and off based on a voltage applied to a terminal, among the drain and the source of the transistor of the nonlinear circuit, that is disconnected from the control terminal. 10. The switch according to claim 2 , wherein the control terminal of each of the one or more switching transistors is a gate of the respective one or more switching transistors. 11. The switch according to claim 2 , wherein the control terminal of each of the one or more switching transistors is a back gate of the respective one or more switching transistors. 12. The switch according to claim 2 , wherein the nonlinear circuit includes a diode. 13. The switch according to claim 2 , wherein the nonlinear circuit includes a variable resistance circuit configured to vary a resistance value of the non-linear circuit based on a voltage at the control terminal.

Assignees

Inventors

Classifications

  • Gating switches, e.g. pass gates · CPC title

  • Soft switching · CPC title

  • by feedback from the output circuit to the control circuit · CPC title

  • Special modifications or use of the back gate voltage of a FET · CPC title

  • H03K5/023Primary

    using field effect transistors · CPC title

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Frequently asked questions

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What does patent US9621139B2 cover?
Provided with one or more first transistors of a first conductivity type each including a gate, a source, and a drain, the gate being connected to an input terminal, the source being configured to be connected to a first voltage source, the drain being connected to an output node, one or more second transistors of a second conductivity type each including a gate, a source, and a drain, the gate…
Who is the assignee on this patent?
Sony Corp
What technology area does this patent fall under?
Primary CPC classification H03K5/023. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).