Booster circuit
US-2017373591-A1 · Dec 28, 2017 · US
US9621139B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9621139-B2 |
| Application number | US-201314394660-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 14, 2013 |
| Priority date | May 28, 2012 |
| Publication date | Apr 11, 2017 |
| Grant date | Apr 11, 2017 |
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Provided with one or more first transistors of a first conductivity type each including a gate, a source, and a drain, the gate being connected to an input terminal, the source being configured to be connected to a first voltage source, the drain being connected to an output node, one or more second transistors of a second conductivity type each including a gate, a source, and a drain, the gate being connected to the input terminal, the source being configured to be connected to a second voltage source, the drain being connected to the output node, a first resistor that is inserted and connected between the input terminal and the output node, a first output terminal that is connected to the input terminal, and a second output terminal that is directly or indirectly connected to the output node.
Opening claim text (preview).
The invention claimed is: 1. A balun, comprising: one or more first transistors of a first conductivity type each including a first gate, a first source, and a first drain, wherein the first gate is connected to an input terminal, the first source is connected to a first voltage source, and the first drain is connected to an output node; one or more second transistors of a second conductivity type each including a second gate, a second source, and a second drain, wherein the second gate is connected to the input terminal, the second source is connected to a second voltage source, and the second drain is connected to the output node; a first resistor directly connected between the input terminal and the output node, wherein the output node is configured to form a junction of the first drain of the one or more first transistors and the second drain of the one or more second transistors; a first output terminal connected to the input terminal; and a second output terminal directly or indirectly connected to the output node. 2. A switch configured to control a balun, the switch comprising: one or more switching transistors each including a control terminal, wherein the one or more switching transistors are configured to select at least one of one or more first transistors of a first conductivity type or one or more second transistors of a second conductivity type; and a nonlinear circuit configured to be respectively connected to the control terminal of each of the one or more switching transistors, wherein the balun comprises: the one or more first transistors each including a first gate, a first source, and a first drain, wherein the first gate is connected to an input terminal, the first source is connected to a first voltage source and the first drain is connected to an output node; the one or more second transistors each including a second gate, a second source, and a second drain, wherein the second gate is connected to the input terminal, the second source is connected to a second voltage source, and the second drain is connected to the output node; a first resistor connected between the input terminal and the output node, wherein the output node is configured to form a junction of the first drain of the one or more first transistors and the second drain of the one or more second transistors; a first output terminal connected to the input terminal; and a second output terminal directly or indirectly connected to the output node. 3. The switch according to claim 2 , wherein the one or more switching transistors include an N-type transistor, and impedance of the nonlinear circuit decreases with an increase in a voltage of the control terminal. 4. The switch according to claim 2 , wherein the one or more switching transistors include a P-type transistor, and impedance of the nonlinear circuit increases with an increase in a voltage of the control terminal. 5. The switch according to claim 2 , wherein the nonlinear circuit includes a transistor. 6. The switch according to claim 5 , wherein the transistor includes a gate, a drain, and a source, and one of the drain, the source, or the gate are connected to each other. 7. The switch according to claim 6 , wherein the transistor is a P-type transistor, and the control terminal is connected to another of the drain or the source of the transistor. 8. The switch according to claim 6 , wherein the transistor is an N-type transistor, and the control terminal is connected to one of the drain or the source of the transistor. 9. The switch according to claim 7 , wherein each of the one or more switching transistors is configured to be turned on and off based on a voltage applied to a terminal, among the drain and the source of the transistor of the nonlinear circuit, that is disconnected from the control terminal. 10. The switch according to claim 2 , wherein the control terminal of each of the one or more switching transistors is a gate of the respective one or more switching transistors. 11. The switch according to claim 2 , wherein the control terminal of each of the one or more switching transistors is a back gate of the respective one or more switching transistors. 12. The switch according to claim 2 , wherein the nonlinear circuit includes a diode. 13. The switch according to claim 2 , wherein the nonlinear circuit includes a variable resistance circuit configured to vary a resistance value of the non-linear circuit based on a voltage at the control terminal.
Gating switches, e.g. pass gates · CPC title
Soft switching · CPC title
by feedback from the output circuit to the control circuit · CPC title
Special modifications or use of the back gate voltage of a FET · CPC title
using field effect transistors · CPC title
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