Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Solid state lighting dies with quantum emitters and associated methods of manufacturing
US9620670B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9620670-B2 |
| Application number | US-87436010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 2, 2010 |
| Priority date | Sep 2, 2010 |
| Publication date | Apr 11, 2017 |
| Grant date | Apr 11, 2017 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.
First claim
Opening claim text (preview).
We claim: 1. A method for forming a solid state lighting die, comprising: forming a buffer material on a substrate material; forming a masking material on the buffer material such that the buffer material is between the masking material and the substrate material, the masking material including a plurality of openings individually exposing a portion of the buffer material; removing the portion of the buffer material and a portion of the substrate material underlying the portion of the buffer material through the openings, thereby creating a plurality of indentations in the substrate material; depositing an insulating material into the indentations in the substrate material; and thereafter, forming an active region on the buffer material with the insulating material in the indentations. 2. The method of claim 1 , further comprising removing the masking material from the substrate material after the insulating material is deposited into the indentations. 3. The method of claim 1 wherein: the method further comprises removing the masking material from the substrate material after the insulating material is deposited into the indentations; and forming the active region includes forming a plurality of active elements separated from one another by the insulating material in the indentations.
Assignees
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Classifications
Electricity · mapped topic
- H01L33/007Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9620670B2 cover?
- Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The…
- Who is the assignee on this patent?
- Basceri Cem, Kurth Casey, Gehrke Thomas, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H01L33/007. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 11 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).