Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
US9224909B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224909-B2 |
| Application number | US-201313904475-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 29, 2013 |
| Priority date | Aug 26, 2009 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a light emitting device, the method comprising: forming a reflection buffer layer structure including forming a metal buffer layer and forming a dispersion Bragg reflection (DBR) layer on a silicon substrate, wherein the forming the metal buffer layer includes using one of B and B 2 ; forming an XY material layer on the DBR layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B, and B 2 ; and…
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