GaN based light emitting devices utilizing dispersion bragg reflection layer

US9224909B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9224909-B2
Application numberUS-201313904475-A
CountryUS
Kind codeB2
Filing dateMay 29, 2013
Priority dateAug 26, 2009
Publication dateDec 29, 2015
Grant dateDec 29, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a light emitting device, the method comprising: forming a reflection buffer layer structure including forming a metal buffer layer and forming a dispersion Bragg reflection (DBR) layer on a silicon substrate, wherein the forming the metal buffer layer includes using one of B and B 2 ; forming an XY material layer on the DBR layer, wherein X is at least one of Ti, Cr, Zr, Hf, Nb, and Ta, and Y is at least one of B, and B 2 ; and…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9224909B2 cover?
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.
Who is the assignee on this patent?
Kim Jun-Youn, Min Bok-Ki, Hong Hyun-Gi, and 2 more
What technology area does this patent fall under?
Primary CPC classification H10H20/01335. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).