Body-contact metal-oxide-semiconductor field effect transistor device

Patent metadata

Field	Value
Publication number	US-9620640-B2
Application number	US-201414450445-A
Country	US
Kind code	B2
Filing date	Aug 4, 2014
Priority date	Nov 4, 2013
Publication date	Apr 11, 2017
Grant date	Apr 11, 2017

Abstract

The invention provides a body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device. The body-contact MOSFET device includes a substrate. An active region is disposed on the substrate. A gate strip is extended along a first direction disposed on a first portion of the active region. A source doped region and a drain doped region are disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip. The opposite sides of the gate strip are extended along the first direction. A body-contact doped region is disposed on a fourth portion of the active region. The body-contact doped region is separated from the gate strip by a fifth portion of the active region. The fifth portion is not covered by any silicide features.

First claim

What is claimed is:

1. A body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device, comprising:
a substrate;
an active region on the substrate;
a gate strip extended substantially along a first direction disposed on a first portion of the active region;
a source doped region and a drain doped region disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip,
wherein the opposite sides of the gate strip are extended substantially along the first direction; and
a body-contact doped region disposed on a fourth portion of the active region, wherein the body-contact doped region is separated from each of the gate strip, the source doped region, and the drain doped region by a same distance in the first direction via a fifth portion of the active region, wherein the fifth portion is not covered by any silicide features,
wherein a top surface of the fifth portion is entirely covered by and only in contact with a dielectric layer.

2. The body-contact MOSFET device as claimed in claim 1 , wherein the body-contact doped region is separated from the gate strip along the first direction.

3. The body-contact MOSFET device as claimed in claim 1 , wherein the source doped region and the drain doped region have a first conductive type, and the body-contact doped region has a second conductive type opposite to the first conductive type.

4. The body-contact MOSFET device as claimed in claim 1 , wherein the body-contact doped region and the gate strip are adjacent to opposite sides of the fifth portion of the active region, respectively.

5. The body-contact MOSFET device as claimed in claim 4 , wherein the first portion and the fourth portion of the active region are adjacent to the opposite sides of the fifth portion of the active region, respectively.

6. The body-contact MOSFET device as claimed in claim 4 , wherein the opposite sides of the fifth portion of the active region are extended substantially along a second direction different from the first direction.

7. The body-contact MOSFET device as claimed in claim 6 , wherein a width of the fifth portion of the active region substantially along the second direction is larger than a width of the gate strip substantially along the second direction and less than or equal to a maximum distance between the source and drain doped regions substantially along the second direction.

8. The body-contact MOSFET device as claimed in claim 6 , wherein a width of the fifth portion of the active region substantially along the second direction is equal to or less than a width of the gate strip substantially along the second direction.

9. The body-contact MOSFET device as claimed in claim 1 , wherein the fifth portion of the active region is not covered by the gate strip.

10. The body-contact MOSFET device as claimed in claim 1 , wherein the fourth portion of the active region is separated from the first, second and third portions of the active region by a distance.

11. The body-contact MOSFET device as claimed in claim 10 , wherein the distance is equal to a length of the fifth portion of the active region along the first direction.

12. The body-contact MOSFET device as claimed in claim 1 , wherein the substrate comprises a silicon-on-insulator (SOI) substrate or silicon-on-sapphire (SOS) substrate.

13. A body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device, comprising:
a substrate; and
an active region on the substrate, comprising:
a metal-oxide-semiconductor field effect transistor (MOSFET) portion configured for a MOSFET formed thereon;
a body-contact doped region portion configured for a body-contact doped region formed thereon, wherein the MOSFET portion is separated from the body-contact doped region portion; and
a connecting portion between and connected to both the MOSFET portion and the body-contact doped region portion, wherein the connecting portion is not covered by any silicide features,
wherein a top surface of the connecting portion is entirely covered by and only in contact with a dielectric layer;
wherein the MOSFET comprises:
a gate strip covering the MOSFET portion; and
a source doped region and a drain doped region on the MOSFET portion and adjacent to and aligned with opposite sides of the gate strip, wherein the body-contact doped region is separated from each of the gate strip, the source doped region, and the drain doped region by a same distance.

14. The body-contact MOSFET device as claimed in claim 13 , wherein the MOSFET has a channel width direction and a channel length direction substantially vertical to the channel width direction.

15. The body-contact MOSFET device as claimed in claim 14 , wherein the MOSFET portion is separated from the body-contact doped region portion substantially along the channel length direction.

16. The body-contact MOSFET device as claimed in claim 14 , wherein: the source doped region and the drain doped region are separated from each other substantially along the channel width direction.

17. The body-contact MOSFET device as claimed in claim 16 , wherein the source doped region and the drain doped region have a first conductive type, and the body-contact doped region has a second conductive type opposite to the first conductive type.

18. The body-contact MOSFET device as claimed in claim 16 , wherein the body-contact doped region and the gate strip are adjacent to opposite sides of the connecting portion of the active region.

19. The body-contact MOSFET device as claimed in claim 16 , wherein a width of the connecting portion substantially along the channel width direction is narrower than or equal to a width of the gate strip substantially along the channel width direction.

20. The body-contact MOSFET device as claimed in claim 16 , wherein a width of the connecting portion along the channel width direction is larger than a width of the gate strip substantially along the channel width direction and less than a maximum distance between the source and drain doped regions substantially along the channel width direction.

21. The body-contact MOSFET device as claimed in claim 16 , wherein the connecting portion of the active region is not covered by the gate strip.

22. The body-contact MOSFET device as claimed in claim 13 , wherein the substrate comprises a silicon-on-insulator (SOI) substrate or silicon-on-sapphire (SOS) substrate.

23. The body-contact MOSFET device as claimed in claim 13 , wherein the body-contact doped region portion and the MOSFET portion are covered by silicide features.

24. A body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device, comprising:
a substrate; and
an active region on the substrate, comprising:
a metal-oxide-semiconductor field effect transistor (MOSFET) portion configured for a MOSFET formed thereon; and
a body-contact doped region portion configured for a body-contact doped region formed thereon, wherein the MOSFET portion is connected to the body-contact doped region portion only through a connecting portion, wherein the connecting portion is not covered by any silicide features,
wherein a top surface of the connecting portion is entirely covered by and only in contact with a dielectric layer;
wherein the MOSFET comprises:
a gate strip covering the MOSFET portion; and
a source doped region and a drain doped region on the MOSFET portion and adjacent to and aligned with opposite sid

Assignees

• Mediatek Inc

Inventors

• Hung Cheng-Chou
• Lee Tung-Hsing
• Tenbroek Bernard Mark
• Chen rong-tang

Classifications

• H01L29/4975

  Electricity · mapped topic

• H01L29/0649

  Electricity · mapped topic

• H01L29/78615

  Electricity · mapped topic

• H01L29/783 Primary

  Electricity · mapped topic

• H01L29/4238

  Electricity · mapped topic